Taiwan semiconductor manufacturing co., ltd. (20240162142). DIAGONAL VIA MANUFACTURING METHOD simplified abstract
Contents
- 1 DIAGONAL VIA MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIAGONAL VIA MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this method compare to existing techniques for via structure formation in terms of cost-effectiveness and scalability?
- 1.9.3 What are the potential challenges or limitations of implementing this alignment technique in large-scale semiconductor manufacturing processes?
- 1.10 Original Abstract Submitted
DIAGONAL VIA MANUFACTURING METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chih-Min Hsiao of Hsinchu (TW)
Ching-Hsu Chang of Hsinchu (TW)
Jiann-Tyng Tzeng of Hsinchu (TW)
DIAGONAL VIA MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162142 titled 'DIAGONAL VIA MANUFACTURING METHOD
Simplified Explanation
The abstract describes a method of manufacturing via structures on an integrated circuit using a specific photo mask alignment technique.
- The method involves providing an IC photo mask with via features and assist features positioned along alternating diagonal grid lines.
- The IC photo mask is aligned with first metal segments of a semiconductor substrate, with the first metal segments having a specific spacing corresponding to a pitch of the grid.
- Photolithography processes are performed using the IC photo mask to define via structure locations and form via structures at those locations.
Potential Applications
This technology can be applied in the manufacturing of integrated circuits, specifically in the fabrication of via structures for interconnecting different layers of the circuit.
Problems Solved
This method helps in achieving precise alignment and definition of via structures on the semiconductor substrate, improving the overall performance and reliability of the integrated circuit.
Benefits
- Enhanced precision in via structure formation - Improved interconnection reliability - Increased efficiency in manufacturing processes
Potential Commercial Applications
The technology can be utilized in the semiconductor industry for producing advanced integrated circuits with high-density interconnects.
Possible Prior Art
One possible prior art could be the use of traditional photolithography techniques for defining via structures on integrated circuits.
Unanswered Questions
How does this method compare to existing techniques for via structure formation in terms of cost-effectiveness and scalability?
This article does not provide information on the cost-effectiveness and scalability of the proposed method compared to existing techniques.
What are the potential challenges or limitations of implementing this alignment technique in large-scale semiconductor manufacturing processes?
The article does not address the potential challenges or limitations that may arise when implementing this alignment technique in large-scale semiconductor manufacturing processes.
Original Abstract Submitted
a method of manufacturing a plurality of via structures includes providing an integrated circuit (ic) photo mask including via features and assist features positioned exclusively along alternating diagonal grid lines of a grid, aligning the ic photo mask with first metal segments of a first metal layer of a semiconductor substrate, the first metal segments having a first spacing corresponding to a first pitch of the grid, performing one or more photolithography processes including the ic photo mask, thereby defining via structure locations corresponding to the via features, and forming via structures at the defined via structure locations.
