Taiwan semiconductor manufacturing co., ltd. (20240162119). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Ching-Yu Huang of Hsinchu (TW)
Der-Chyang Yeh of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162119 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The embodiment described in the abstract involves a method for forming interconnect structures on a substrate, including the use of dielectric layers, metallization patterns, passivation layers, probe pads, bond pads, and bond vias.
- Forming a first interconnect structure on a substrate with dielectric layers and metallization patterns
- Adding a passivation layer over the top metal structures
- Creating a first opening and placing a probe pad in it for circuit probe testing
- Removing the probe pad and adding a bond pad and bond via for electrical coupling to other metal structures
Potential Applications
This technology can be applied in semiconductor manufacturing, integrated circuit testing, and electronic device production.
Problems Solved
This method solves the problem of efficiently testing and connecting different metal structures in an interconnect system.
Benefits
The benefits of this technology include improved testing accuracy, enhanced electrical connections, and increased reliability in electronic devices.
Potential Commercial Applications
Potential commercial applications of this technology include semiconductor fabrication facilities, electronics manufacturing companies, and integrated circuit testing laboratories.
Possible Prior Art
One possible prior art for this technology could be similar methods used in the semiconductor industry for testing and connecting metal structures in interconnect systems.
Unanswered Questions
How does this technology compare to traditional methods of testing and connecting metal structures in interconnect systems?
This technology offers a more efficient and reliable way to test and connect metal structures compared to traditional methods, but the specific advantages and limitations need to be further explored.
What are the potential scalability challenges of implementing this technology in large-scale semiconductor manufacturing processes?
While this method shows promise for improving interconnect structures, there may be challenges in scaling up the process for mass production, such as cost-effectiveness, production speed, and compatibility with existing manufacturing equipment.
Original Abstract Submitted
an embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein, the metallization patterns including a top metal layer including top metal structures, forming a passivation layer over the top metal structures of the first interconnect structure, forming a first opening through the passivation layer, forming a probe pad in the first opening and over the passivation layer, the probe pad being electrically connected to the first top metal structure, performing a circuit probe test on the probe pad, removing the probe pad, and forming a bond pad and a bond via in dielectric layers over the passivation layer, the bond pad and bond via being electrically coupled to a second top metal structure of the top metal structures and a third top metal structure of the top metal structures.
