Taiwan semiconductor manufacturing co., ltd. (20240162095). DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD simplified abstract
Contents
- 1 DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuan-Da Huang of Hsinchu County (TW)
Hao-Heng Liu of Hsinchu City (TW)
DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162095 titled 'DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD
Simplified Explanation
The present disclosure describes an integrated chip with a unique structure involving a gate electrode, source/drain regions, dielectric layer, etch stop layer, gate capping layer, and conductive contact.
- The gate capping layer extends continuously from the top surface of the etch stop layer to the top surface of the gate electrode, featuring a curved sidewall over the etch stop layer.
- The conductive contact above the source/drain region has a width that decreases continuously from its top surface to a point above the lower surface of the gate capping layer, following the curved sidewall of the gate capping layer.
Potential Applications
This technology could be applied in the manufacturing of advanced integrated circuits, particularly in the development of high-performance transistors.
Problems Solved
This innovation helps in improving the performance and efficiency of integrated circuits by optimizing the contact structure between the conductive contact and the source/drain region.
Benefits
The integrated chip design described in the patent application offers enhanced electrical connectivity and reduced resistance, leading to better overall performance of the integrated circuit.
Potential Commercial Applications
This technology could find applications in the semiconductor industry for the production of next-generation electronic devices with improved speed and power efficiency.
Possible Prior Art
One possible prior art could be the use of similar gate capping layers in semiconductor devices to improve contact structures and reduce resistance.
Unanswered Questions
How does this technology compare to existing contact structures in terms of performance and efficiency?
The article does not provide a direct comparison with existing contact structures to evaluate the advantages of this new design.
What specific manufacturing processes are required to implement this integrated chip design?
The manufacturing processes involved in creating this unique structure are not detailed in the article, leaving a gap in understanding the practical implementation of the technology.
Original Abstract Submitted
in some embodiments, the present disclosure relates to an integrated chip including a gate electrode over a substrate. a pair of source/drain regions are disposed in the substrate on opposing sides of the gate electrode. a dielectric layer is over the substrate. an etch stop layer is between the gate electrode and the dielectric layer. a gate capping layer overlies the gate electrode, continuously extends from a top surface of the etch stop layer to a top surface of the gate electrode, and comprises a curved sidewall over the top surface of the etch stop layer. a conductive contact overlies an individual source/drain region. a width of the conductive contact continuously decreases from a top surface of the conductive contact to a first point disposed above a lower surface of the gate capping layer. the conductive contact extends along the curved sidewall of the gate capping layer.
