Taiwan semiconductor manufacturing co., ltd. (20240162094). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Shih-Chuan Chiu of Hsinchu (TW)

Jia-Chuan You of Taoyuan City (TW)

Chia-Hao Chang of Hsinchu City (TW)

Chun-Yuan Chen of HsinChu (TW)

Tien-Lu Lin of Hsinchu City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Baoshan Township, Hsinchu County (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162094 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor device structure described in the abstract includes a substrate, a conductive feature, and an electrical connection structure. The electrical connection structure consists of a first grain made of a first metal material and a first inhibition layer made of a second metal material different from the first.

• The semiconductor device structure includes a substrate, a conductive feature, and an electrical connection structure.
• The electrical connection structure comprises a first grain made of a first metal material and a first inhibition layer made of a second metal material.
• The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along the bottom of the grain boundary.

Potential Applications

This technology could be applied in:

• Semiconductor manufacturing
• Electronics industry
• Renewable energy sector

Problems Solved

This technology helps in:

• Enhancing conductivity in semiconductor devices
• Improving the performance of electronic components
• Reducing resistance in electrical connections

Benefits

The benefits of this technology include:

• Increased efficiency in semiconductor devices
• Enhanced reliability of electronic systems
• Improved overall performance of electronic devices

Potential Commercial Applications

• High-performance computing
• Telecommunications industry
• Automotive electronics

Possible Prior Art

There may be prior art related to:

• Metal deposition techniques in semiconductor devices
• Grain boundary engineering in electronic components

Unanswered Questions

How does this technology compare to existing methods of improving conductivity in semiconductor devices?

This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages of this new approach.

What are the specific limitations or challenges associated with implementing this technology in practical applications?

The article does not address any potential drawbacks or obstacles that may arise when applying this technology in real-world scenarios, leaving room for further exploration and research.

Original Abstract Submitted

a semiconductor device structure is provided. the semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. the electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. the first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.