Taiwan semiconductor manufacturing co., ltd. (20240162088). INTEGRATED CIRCUIT DEVICE simplified abstract

INTEGRATED CIRCUIT DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Hsia-Wei Chen of Taipei City (TW)

Fu-Ting Sung of Taoyuan City (TW)

Yu-Wen Liao of New Taipei City (TW)

Wen-Ting Chu of Kaohsiung City (TW)

Fa-Shen Jiang of Taoyuan City (TW)

Tzu-Hsuan Yeh of Taoyuan City (TW)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162088 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The integrated circuit device described in the abstract includes multiple conductive features and a memory structure, all interconnected within the device. Here is a simplified explanation of the patent application:

• The device consists of an interconnect layer with two conductive features.
• A memory structure, containing a resistance switching element, is in contact with one of the conductive features.
• A third conductive feature, with a conductive line, is in contact with the second conductive feature.
• A fourth conductive feature, including another conductive line, is in contact with the memory structure.
• The top surface of the first conductive line is level with the top surface of the second conductive line, while the bottom surface of the first conductive line is lower than the bottommost portion of the second conductive line.

Potential Applications

The technology described in this patent application could be used in various electronic devices, such as memory modules, processors, and other integrated circuits.

Problems Solved

This technology solves the problem of efficiently integrating memory structures and multiple conductive features within a compact integrated circuit device.

Benefits

The benefits of this technology include improved performance, increased memory capacity, and enhanced functionality of electronic devices.

Potential Commercial Applications

One potential commercial application of this technology could be in the development of advanced computer processors with enhanced memory capabilities.

Possible Prior Art

One possible prior art for this technology could be the development of integrated circuits with memory structures and multiple conductive features, although the specific configuration described in this patent application may be unique.

How does this technology compare to existing memory structures in terms of speed and efficiency?

This article does not provide a direct comparison between this technology and existing memory structures in terms of speed and efficiency. Further research or testing would be needed to determine the performance differences.

What are the potential challenges in implementing this technology on a large scale for commercial production?

The article does not address the potential challenges in implementing this technology on a large scale for commercial production. Factors such as cost, scalability, and manufacturing processes could pose challenges that are not discussed in the patent application.

Original Abstract Submitted

an integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. the interconnect layer includes a first conductive feature and a second conductive feature. the memory structure is over and in contact with the first conductive feature. the memory structure includes at least a resistance switching element over the first conductive feature. the third conductive feature, including a first conductive line, is over and in contact with the second conductive feature. the fourth conductive feature is over and in contact with the memory structure. the fourth conductive feature includes a second conductive line, a top surface of the first conductive line is substantially level with a top surface of the second conductive line, and a bottom surface of the first conductive line is lower than a bottommost portion of a bottom surface of the second conductive line.