Taiwan semiconductor manufacturing co., ltd. (20240162084). SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME simplified abstract
SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hsin-Yen Huang of Hsinchu (TW)
Cheng-Chin Lee of Hsinchu (TW)
Hsiao-Kang Chang of Hsinchu (TW)
SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162084 titled 'SEMICONDUCTOR STRUCTURE HAVING AIR GAPS AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor structure with air gaps confined by spacer layers and a sustaining layer. Here are the key points of the innovation:
- Preparation of a dielectric structure with trenches defined by lateral surfaces
- Formation of spacer layers on the lateral surfaces
- Filling trenches with electrically conductive material to form features
- Selective deposition of a blocking layer on the dielectric structure
- Deposition of a dielectric material on the features to form a capping layer
- Removal of the blocking layer and dielectric structure to form recesses
- Formation of sacrificial features in the recesses
- Application of a sustaining layer to cover the sacrificial features
- Removal of sacrificial features to obtain the semiconductor structure with air gaps
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- Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance integrated circuits and memory chips.
- Problems Solved
This technology solves the problem of reducing parasitic capacitance in semiconductor structures, which can improve the performance and efficiency of electronic devices.
- Benefits
The use of air gaps confined by spacer layers and a sustaining layer can help enhance the insulation properties of semiconductor structures, leading to better signal integrity and reduced power consumption.
- Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of next-generation electronic devices with improved performance and energy efficiency.
- Possible Prior Art
One possible prior art for this technology could be the use of sacrificial layers in semiconductor manufacturing processes to create voids or gaps for specific purposes, such as reducing capacitance.
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- Unanswered Questions
- How does this technology compare to existing methods for reducing parasitic capacitance in semiconductor structures?
The article does not provide a direct comparison with existing methods for reducing parasitic capacitance in semiconductor structures. It would be helpful to understand the specific advantages and limitations of this new approach in comparison to traditional techniques.
- What are the potential challenges or limitations in implementing this technology on a large scale in semiconductor fabrication facilities?
The article does not address the potential challenges or limitations in implementing this technology on a large scale in semiconductor fabrication facilities. It would be important to explore factors such as cost, scalability, and compatibility with existing manufacturing processes.
Original Abstract Submitted
a method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.
