Taiwan semiconductor manufacturing co., ltd. (20240162083). BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shuen-Shin Liang of Hsinchu County (TW)
Chen-Han Wang of Zhubei City (TW)
Keng-Chu Lin of Chao-Chou Ping-Tung (TW)
Tetsuji Ueno of Hsinchu City (TW)
Ting-Ting Chen of New Taipei City (TW)
BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162083 titled 'BILAYER SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES
Simplified Explanation
The present disclosure relates to a method for forming a semiconductor device that involves creating an opening between first and second terminals with opposing sidewalls, depositing dielectric materials at different rates to trap air pockets, and performing a treatment process on the dielectric material.
- Forming an opening between first and second terminals with opposing sidewalls
- Depositing a first dielectric material at a first deposition rate on top portions of the opening
- Depositing a second dielectric material at a second deposition rate on the first dielectric material and on the sidewalls to trap a pocket of air
- Performing a treatment process on the second dielectric material
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This method helps in improving the insulation properties of the semiconductor device by trapping air pockets within the dielectric material, reducing signal interference and improving overall performance.
Benefits
- Enhanced insulation properties - Reduced signal interference - Improved overall performance of the semiconductor device
Potential Commercial Applications
This technology could be utilized in the production of high-performance electronic devices, telecommunications equipment, and other advanced semiconductor applications.
Possible Prior Art
One possible prior art could be the use of different deposition rates for dielectric materials in semiconductor device manufacturing processes to improve performance and insulation properties.
=== What are the specific treatment processes performed on the second dielectric material? The abstract does not provide details on the specific treatment processes applied to the second dielectric material.
=== How does trapping a pocket of air between the dielectric material and sidewalls benefit the semiconductor device? The abstract does not elaborate on the specific advantages or mechanisms of trapping air pockets in the semiconductor device.
Original Abstract Submitted
the present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. the first and second sidewalls oppose each other. the method further includes depositing a first dielectric material at a first deposition rate on top portions of the opening and depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewalls. the second dielectric material and the first and second sidewalls entrap a pocket of air. the method also includes performing a treatment process on the second dielectric material.
