Taiwan semiconductor manufacturing co., ltd. (20240162059). Semiconductor Devices and Methods of Manufacturing simplified abstract
Contents
- 1 Semiconductor Devices and Methods of Manufacturing
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Devices and Methods of Manufacturing - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Semiconductor Devices and Methods of Manufacturing
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jhon Jhy Liaw of Zhudong Township (TW)
Semiconductor Devices and Methods of Manufacturing - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162059 titled 'Semiconductor Devices and Methods of Manufacturing
Simplified Explanation
The patent application describes semiconductor devices with gate all around (GAA) transistor structures and their manufacturing methods, including using different thicknesses in an epi-growth scheme to create varying sheet thicknesses within the same device channel regions for vertically stacked nanostructure GAA devices. Specifically, a GAA device may have a vertical stack of nanostructures in a channel region, with the topmost nanostructure being thicker than the others, and the topmost nanostructure's lightly doped drain (LDD) portion being the thickest in the stack.
- Semiconductor devices with GAA transistor structures
- Manufacturing methods using different thicknesses in epi-growth scheme
- Creating varying sheet thicknesses within device channel regions
- Vertically stacked nanostructure GAA devices
- Topmost nanostructure thicker than others in the stack
- LDD portion of topmost nanostructure being the thickest
Potential Applications
The technology described in the patent application could be applied in the following areas:
- Advanced electronics
- Nanotechnology research
- Semiconductor industry
Problems Solved
The technology addresses the following issues:
- Improving transistor performance
- Enhancing device efficiency
- Enabling the manufacturing of vertically stacked nanostructure devices
Benefits
The technology offers the following benefits:
- Increased device performance
- Enhanced scalability
- Improved power efficiency
Potential Commercial Applications
The technology could find commercial applications in:
- Mobile devices
- Internet of Things (IoT) devices
- High-performance computing systems
Possible Prior Art
One possible prior art in this field is the use of FinFET structures in semiconductor devices for improved performance and power efficiency.
Unanswered Questions
How does this technology compare to existing GAA transistor structures in terms of performance and efficiency?
The article does not provide a direct comparison between the new technology and existing GAA transistor structures.
What are the potential challenges in scaling up the manufacturing of semiconductor devices with vertically stacked nanostructures?
The article does not address the potential challenges in scaling up the manufacturing process for these advanced devices.
Original Abstract Submitted
semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (gaa) transistor structures and manufacturing methods thereof. different thickness in an epi-growth scheme is adopted to create different sheet thicknesses within the same device channel regions for use in manufacturing vertically stacked nanostructure (e.g., nanosheet, nanowire, or the like) gaa devices. a gaa device may be formed with a vertical stack of nanostructures in a channel region with a topmost nanostructure of the vertical stack being thicker than the other nanostructures of the vertical stack. furthermore, an ldd portion of the topmost nanostructure may be formed as the thickest of the nanostructures in the vertical stack.
