Taiwan semiconductor manufacturing co., ltd. (20240161822). MEMORY DEVICE WITH WORD LINE PULSE RECOVERY simplified abstract

MEMORY DEVICE WITH WORD LINE PULSE RECOVERY

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Wei-jer Hsieh of Hsinchu City (TW)

Yu-Hao Hsu of Tainan City (TW)

Zhi-Hao Chang of Hsinchu (TW)

Cheng Hung Lee of Hsinchu (TW)

MEMORY DEVICE WITH WORD LINE PULSE RECOVERY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240161822 titled 'MEMORY DEVICE WITH WORD LINE PULSE RECOVERY

Simplified Explanation

The memory device described in the abstract includes various components that work together to enhance the performance of memory cells. Here is a simplified explanation of the patent application:

• Memory device with multiple memory cells
• Word line provides a first pulse with specific characteristics
• First tracking word line generates a second pulse with modified characteristics
• First tracking bit line mimics the behavior of the bit line
• Pulse width of the first pulse is adjusted based on the characteristics of the second pulse

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1. 1. 1. Potential Applications of this Technology

• High-speed memory systems
• Improved data storage devices
• Enhanced memory performance in electronic devices

1. 1. 1. Problems Solved by this Technology

• Faster data writing and reading speeds
• More efficient memory cell operation
• Reduction of data errors in memory devices

1. 1. 1. Benefits of this Technology

• Increased data transfer rates
• Enhanced reliability of memory storage
• Improved overall performance of electronic devices

1. 1. 1. Potential Commercial Applications of this Technology
         1. Optimizing Memory Cell Performance for Electronic Devices

1. 1. 1. Possible Prior Art

There is no prior art known at this time.

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1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing memory cell optimization techniques?

This article does not provide a direct comparison to other memory cell optimization methods. Further research and analysis would be needed to determine the advantages and disadvantages of this technology in relation to existing techniques.

1. 1. 1. 1. What impact could this technology have on the cost of memory devices?

The cost implications of implementing this technology are not addressed in the article. Understanding how this innovation may affect the overall cost of memory devices would be crucial for assessing its feasibility and market potential.

Original Abstract Submitted

a memory device includes a plurality of memory cells; a word line, connected to one of the plurality of memory cells, that is configured to provide a first wl pulse having a rising edge and a falling edge that define a pulse width of the first wl pulse; a first tracking wl, formed adjacent to the memory cells, that is configured to provide, via being physically or operatively coupled to a bit line (bl) configured to write a logic state to the memory cell, a second wl pulse having a rising edge with a decreased slope; and a first tracking bl, configured to emulate the bl, that is coupled to the first tracking wl such that the pulse width of the first wl pulse is increased based on the decreased slope of the rising edge of the second wl pulse.