Taiwan semiconductor manufacturing co., ltd. (20240161819). MEMORY DEVICE AND MANUFACTURING THEREOF simplified abstract
Contents
- 1 MEMORY DEVICE AND MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE AND MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
MEMORY DEVICE AND MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240161819 titled 'MEMORY DEVICE AND MANUFACTURING THEREOF
Simplified Explanation
The patent application abstract describes a memory bit cell with specific features such as two doped regions, four gate structures, bit line, bit line bar, word line, and power rails.
- The memory bit cell includes two doped regions for storing data.
- Four gate structures are present in the memory bit cell for controlling data access.
- The bit line, bit line bar, and word line are formed on the front side of the bit cell.
- Power rails are formed on the back side of the bit cell.
- Some embodiments include two word lines in each bit cell.
Potential Applications
This technology can be applied in:
- Semiconductor memory devices
- Computer systems
- Mobile devices
Problems Solved
- Improved data storage and access in memory cells
- Enhanced performance and efficiency of memory devices
Benefits
- Higher data storage capacity
- Faster data access speeds
- Increased reliability of memory cells
Potential Commercial Applications
Optimizing Memory Bit Cells for Improved Performance
Possible Prior Art
There may be prior art related to memory bit cells with similar features, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing memory cell designs in terms of speed and efficiency?
The abstract does not provide a direct comparison with existing memory cell designs, so it is unclear how this technology stacks up against current solutions.
Are there any limitations or drawbacks to implementing this memory bit cell design in practical applications?
The abstract does not mention any potential limitations or drawbacks of this memory bit cell design, leaving uncertainty about any challenges that may arise during implementation.
Original Abstract Submitted
embodiments of the present disclosure relate to a memory bit cell including two doped regions and four gate structures. bit line, bit line bar, and word line of the bit cell are formed on a front side of the bit cell and power rails are formed on a back side of the bit cell. in some embodiments, each bit cell includes two word lines.
