Taiwan semiconductor manufacturing co., ltd. (20240161797). INTEGRATED CIRCUIT DEVICE AND METHODS simplified abstract

From WikiPatents
Jump to navigation Jump to search

INTEGRATED CIRCUIT DEVICE AND METHODS

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Bo-Feng Young of Hsinchu (TW)

Yu-Ming Lin of Hsinchu (TW)

Shih-Lien Linus Lu of Hsinchu (TW)

Han-Jong Chia of Hsinchu (TW)

Sai-Hooi Yeong of Hsinchu (TW)

Chia-En Huang of Hsinchu (TW)

Yih Wang of Hsinchu (TW)

INTEGRATED CIRCUIT DEVICE AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240161797 titled 'INTEGRATED CIRCUIT DEVICE AND METHODS

Simplified Explanation

The integrated circuit (IC) device described in the patent application includes memory cells with four memory elements each, arranged in rows along a first axis. The first memory element is positioned between a bit line and a first auxiliary conductive line, while the second memory element is located between a second auxiliary conductive line and a first conductor. The third memory element is placed between the first auxiliary conductive line and a second conductor, and the fourth memory element is positioned between the bit line and the second auxiliary conductive line.

  • Memory cells with four memory elements each
  • Arrangement of memory elements in rows along a first axis
  • Specific positioning of each memory element in relation to conductive lines and conductors

Potential Applications

The technology described in this patent application could be applied in:

  • Memory devices
  • Data storage systems
  • Integrated circuits

Problems Solved

This technology addresses issues related to:

  • Memory cell organization
  • Efficient data storage
  • Circuit design complexity

Benefits

The benefits of this technology include:

  • Improved memory cell performance
  • Enhanced data storage capacity
  • Simplified circuit design

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Computer hardware
  • Semiconductor industry

Possible Prior Art

One possible prior art for this technology could be:

  • Memory cell structures with multiple memory elements

Unanswered Questions

How does this technology compare to existing memory cell designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing memory cell designs to evaluate performance and efficiency.

What are the potential challenges in implementing this technology on a large scale for commercial production?

This article does not address the potential challenges in scaling up the production of this technology for commercial applications.


Original Abstract Submitted

an integrated circuit (ic) device includes memory cells each including first through fourth memory elements. the first memory element is physically arranged, along a first axis, between a bit line and a first auxiliary conductive line. the second memory element is physically arranged, along the first axis, between a second auxiliary conductive line and a first conductor. the first and second memory elements are arranged in a first row along the first axis. the third memory element is physically arranged, along the first axis, between the first auxiliary conductive line and a second conductor electrically coupled to the first conductor. the fourth memory element is physically arranged, along the first axis, between the bit line and the second auxiliary conductive line. the third and fourth memory elements are arranged, along the first axis, in a second row spaced from the first row along an axis transverse to the first axis.