Taiwan semiconductor manufacturing co., ltd. (20240160106). METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE simplified abstract

METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chi-Hung Liao of New Taipei City (TW)

Yueh-Lin Yang of Tainan City (TW)

METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240160106 titled 'METHOD AND APPARATUS FOR CONTROLLING DROPLET IN EXTREME ULTRAVIOLET LIGHT SOURCE

Simplified Explanation

The abstract describes a lithography method in semiconductor fabrication involving the generation of elongated droplets of a target material through a nozzle group, conversion of the droplets into plasma using laser pulses to generate extreme ultraviolet (EUV) radiation, reflection of the EUV radiation by a collector mirror, and the generation of oblique elongated droplets at different angles.

• Generation of elongated droplets of target material through a nozzle group
• Conversion of droplets into plasma using laser pulses for EUV radiation generation
• Reflection of EUV radiation by a collector mirror
• Generation of oblique elongated droplets at different angles

Potential Applications

This technology can be applied in the manufacturing of semiconductor devices, specifically in the lithography process for creating intricate patterns on semiconductor wafers.

Problems Solved

This technology helps in achieving high-resolution patterning on semiconductor wafers, which is crucial for the production of advanced electronic devices with smaller features.

Benefits

The method offers improved precision and accuracy in semiconductor fabrication, leading to enhanced performance and efficiency of electronic devices. It also enables the production of smaller and more powerful semiconductor components.

Potential Commercial Applications

The technology can be utilized by semiconductor manufacturers for the mass production of cutting-edge electronic devices such as microprocessors, memory chips, and sensors.

Possible Prior Art

One possible prior art in this field could be the use of laser-induced plasma for EUV radiation generation in lithography processes.

How does the oblique angle of the elongated droplets affect the efficiency of EUV radiation generation?

The oblique angle of the elongated droplets may impact the direction and intensity of the EUV radiation produced, potentially influencing the quality of the lithographic patterns. Further research is needed to understand the specific effects of this angle on the overall process.

What are the limitations of using plasma-generated EUV radiation in semiconductor lithography?

Plasma-generated EUV radiation may have limitations in terms of energy efficiency, cost-effectiveness, and uniformity across large substrate areas. Addressing these limitations could be crucial for the widespread adoption of this technology in semiconductor manufacturing.

Original Abstract Submitted

a lithography method in semiconductor fabrication is provided. the method includes generating a plurality of first drops of a target material through a first nozzle group selected from a plurality of nozzles to form a first elongated droplet; generating a first laser pulse to convert the first elongated droplet into plasma that generates a first extreme ultraviolet (euv) radiation; reflecting the first euv radiation by a collector mirror having an optical axis; generating a plurality of second drops of the target material through a second nozzle group selected from the plurality of nozzles to form a second elongated droplet, the second elongated droplet being oblique with the optical axis of the collector mirror at a different angle than the first elongated droplet.