Taiwan semiconductor manufacturing co., ltd. (20240159599). TEMPERATURE MONITORING DEVICE AND METHOD simplified abstract
Contents
- 1 TEMPERATURE MONITORING DEVICE AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TEMPERATURE MONITORING DEVICE AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
TEMPERATURE MONITORING DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yung-Chow Peng of Hsinchu (TW)
TEMPERATURE MONITORING DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240159599 titled 'TEMPERATURE MONITORING DEVICE AND METHOD
Simplified Explanation
The semiconductor device described in the abstract includes active area structures, dummy gate layers, an active device, a metal layer, and a pair of vias. The first via is connected to ground, while the second via is connected to a current source for voltage measurement.
- Active area structures extend in parallel
- First and second dummy gate layers span the active area structures
- First active device includes portions between the dummy gate layers
- Metal layer spans the active area structures between the dummy gate layers
- Pair of vias positioned at opposite ends of the metal layer
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and communication devices.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a structured layout for active area structures and gate layers, enhancing electrical connectivity and signal processing capabilities.
Benefits
- Enhanced performance and efficiency of semiconductor devices - Improved electrical connectivity and signal processing capabilities - Potential for miniaturization and integration of complex circuits
Potential Commercial Applications
"Advanced Semiconductor Device with Structured Gate Layers for Enhanced Performance and Efficiency" could find applications in the manufacturing of high-performance electronic devices, such as smartphones, tablets, computers, and automotive electronics.
Possible Prior Art
One possible prior art could be the use of dummy gate layers in semiconductor devices to improve electrical characteristics and reduce parasitic effects. Another could be the integration of vias for electrical connections in semiconductor devices to enhance signal processing capabilities.
What are the specific active area structures used in this semiconductor device?
The specific active area structures used in this semiconductor device are not explicitly mentioned in the abstract. However, they are described as extending in parallel, indicating a structured layout for efficient signal processing.
How does the metal layer contribute to the overall functionality of the semiconductor device?
The metal layer spans the active area structures between the dummy gate layers, providing electrical connectivity and signal transmission capabilities. It acts as a conductor for current flow and helps in integrating different components of the device for improved performance.
Original Abstract Submitted
a semiconductor device includes a plurality of active area structures extending in parallel, first and second dummy gate layers spanning the plurality of active area structures, a first active device including first portions of the plurality of active area structures between the first and second dummy gate layers, a metal layer spanning the plurality of active area structures between the first and second dummy gate layers, and a pair of vias positioned at opposite ends of the metal layer. a first via of the pair of vias is configured to be electrically connected to ground, and a second via of the pair of vias is configured to be electrically connected to a current source and a circuit configured to measure a voltage at the node.
