Taiwan semiconductor manufacturing co., ltd. (20240096885). SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Cheng Ching of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096885 titled 'SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
Simplified Explanation
The integrated circuit (IC) device described in the patent application includes a substrate with a metal-oxide-semiconductor (MOS) region, a gate region over the substrate within the MOS region, and source/drain features separated by the gate region. The gate region consists of a fin structure and a nanowire extending over the fin structure from the source feature to the drain feature.
- The IC device comprises a substrate with a MOS region.
- A gate region is located over the substrate within the MOS region.
- Source/drain features are present in the MOS region and separated by the gate region.
- The gate region includes a fin structure and a nanowire extending over the fin structure from the source feature to the drain feature.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as high-performance transistors for use in electronics and computing.
Problems Solved
This innovation helps in improving the performance and efficiency of integrated circuits by enhancing the conductivity and control of electrical signals within the device.
Benefits
The use of a nanowire over a fin structure in the gate region allows for better control of the flow of electrons, leading to faster and more energy-efficient operation of the IC device.
Potential Commercial Applications
The technology could find applications in the manufacturing of next-generation processors, memory chips, and other semiconductor devices, catering to the growing demand for faster and more powerful electronics.
Possible Prior Art
One possible prior art could be the use of nanowires in semiconductor devices to improve conductivity and performance. However, the specific configuration of a nanowire over a fin structure as described in this patent application may be a novel approach.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing transistor designs. It would be interesting to see a side-by-side analysis of the performance metrics of this innovation compared to traditional transistor structures.
What are the potential challenges in scaling up the production of IC devices using this technology for mass commercial applications?
The article does not address the scalability and manufacturing challenges that may arise when implementing this technology on a larger scale. Understanding the potential obstacles in mass production could be crucial for the successful commercialization of this innovation.
Original Abstract Submitted
an integrated circuit (ic) device comprises a substrate having a metal-oxide-semiconductor (mos) region; a gate region disposed over the substrate and in the mos region; and source/drain features in the mos region and separated by the gate region. the gate region includes a fin structure and a nanowire over the fin structure. the nanowire extends from the source feature to the drain feature.
