Taiwan semiconductor manufacturing co., ltd. (20240096849). SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wei-Chung Chang of Taipei City (TW)
Ming-Che Ho of Tainan City (TW)
Hung-Jui Kuo of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096849 titled 'SEMICONDUCTOR STRUCTURE, STACKED STRUCTURE, AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor structure described in the patent application includes a semiconductor die, a redistribution circuit structure, and a terminal. The redistribution circuit structure is located on and connected to the semiconductor die, while the terminal is located on and connected to the redistribution circuit structure. The terminal consists of an under-bump metallization (UBM) and a capping layer, with the UBM having a recess that is filled by the capping layer.
- Semiconductor structure with redistribution circuit and terminal:
* Semiconductor die * Redistribution circuit structure * Terminal
- Terminal components:
* Under-bump metallization (UBM) * Capping layer * UBM recess filled by capping layer
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuit packaging
- Electronic device production
Problems Solved
The innovation addresses the following issues:
- Improving electrical coupling in semiconductor structures
- Enhancing reliability of terminal connections
- Optimizing space utilization in electronic components
Benefits
The technology offers the following benefits:
- Increased performance of semiconductor devices
- Enhanced durability of electronic components
- Streamlined manufacturing processes
Potential Commercial Applications
The semiconductor structure innovation could be utilized in various commercial applications, including:
- Consumer electronics
- Automotive electronics
- Telecommunications equipment
Possible Prior Art
One possible prior art related to this technology is the use of UBM and capping layers in semiconductor packaging to improve electrical connections and protect components.
Unanswered Questions
How does this technology compare to existing semiconductor packaging methods?
The article does not provide a direct comparison between this technology and traditional semiconductor packaging methods. It would be beneficial to understand the specific advantages and disadvantages of this innovation in comparison to existing techniques.
What are the potential limitations or challenges in implementing this semiconductor structure in mass production?
The article does not address any potential limitations or challenges that may arise when implementing this technology on a large scale. It would be important to explore any obstacles that could affect the widespread adoption of this innovation.
Original Abstract Submitted
a semiconductor structure includes a semiconductor die, a redistribution circuit structure, and a terminal. the redistribution circuit structure is disposed on and electrically coupled to the semiconductor die. the terminal is disposed on and electrically coupled to the redistribution circuit structure, where the redistribution circuit structure is disposed between the semiconductor die and the terminal, and the terminal includes an under-bump metallization (ubm) and a capping layer. the ubm is disposed on and electrically coupled to the redistribution circuit structure, where the ubm includes a recess. the capping layer is disposed on and electrically coupled to the ubm, where the ubm is between the capping layer and the redistribution circuit structure, and the capping layer fills the recess of the ubm.