Taiwan semiconductor manufacturing co., ltd. (20240096757). INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hidehiro Fujiwara of Hsinchu (TW)
Tze-Chiang Huang of Hsinchu (TW)
Hong-Chen Cheng of Hsinchu (TW)
Jonathan Tsung-Yung Chang of Hsinchu (TW)
INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096757 titled 'INTEGRATED CIRCUIT DIE WITH MEMORY MACRO INCLUDING THROUGH-SILICON VIA AND METHOD OF FORMING THE SAME
Simplified Explanation
The integrated circuit (IC) die described in the patent application includes rows of through-silicon vias (TSVs) and memory macros that are electrically isolated from each other. The TSVs of the first row extend through and are isolated from the memory macros of the first row, while the TSVs of the third row extend through and are isolated from the memory macros of the second row.
- The IC die features first through third adjacent rows of TSVs and first and second adjacent rows of memory macros.
- TSVs of the first row are electrically isolated from memory macros of the first row.
- TSVs of the third row are electrically isolated from memory macros of the second row.
Potential Applications
This technology could be applied in:
- High-performance computing
- Data centers
- Networking equipment
Problems Solved
- Improved signal integrity
- Enhanced performance
- Reduced power consumption
Benefits
- Higher reliability
- Increased data transfer speeds
- Better overall system efficiency
Potential Commercial Applications
Optimized for:
- Server processors
- Graphics processing units (GPUs)
- Artificial intelligence (AI) accelerators
Possible Prior Art
No known prior art at this time.
Unanswered Questions
How does this technology impact overall system cost?
The cost implications of implementing this technology are not addressed in the article.
What are the potential challenges in manufacturing IC dies with this configuration?
The manufacturing challenges associated with producing IC dies with this specific layout are not discussed in the article.
Original Abstract Submitted
an integrated circuit (ic) die includes first through third adjacent rows of through-silicon vias (tsvs), and first and second adjacent rows of memory macros. tsvs of the first row of tsvs extend through and are electrically isolated from memory macros of the first row of memory macros. tsvs of the third row of tsvs extend through and are electrically isolated from memory macros of the second row of memory macros.
- Taiwan semiconductor manufacturing co., ltd.
- Hidehiro Fujiwara of Hsinchu (TW)
- Tze-Chiang Huang of Hsinchu (TW)
- Hong-Chen Cheng of Hsinchu (TW)
- Yen-Huei Chen of Hsinchu (TW)
- Hung-Jen Liao of Hsinchu (TW)
- Jonathan Tsung-Yung Chang of Hsinchu (TW)
- Yun-Han Lee of Hsinchu (TW)
- Lee-Chung Lu of Hsinchu (TW)
- H01L23/48
- G11C11/418
- H01L21/768
- H10B10/00