Taiwan semiconductor manufacturing co., ltd. (20240096756). MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE simplified abstract
Contents
- 1 MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chih-Liang Chen of Hsinchu (TW)
Shang-Syuan Ciou of Hsinchu (TW)
Hui-Zhong Zhuang of Hsinchu (TW)
Ching-Wei Tsai of Hsinchu (TW)
Shang-Wen Chang of Hsinchu (TW)
MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096756 titled 'MEHTOD OF MAKING SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED INTERCONNECT STRUCTURE
Simplified Explanation
The abstract describes a method of making a semiconductor device involving the manufacturing of a transistor, depositing a spacer material, recessing the spacer material, and creating a self-aligned interconnect structure.
- Manufacturing a first transistor over a first side of a substrate.
- Depositing a spacer material against a sidewall of the first transistor.
- Recessing the spacer material to expose a first portion of the sidewall of the first transistor.
- Manufacturing a first electrical connection to the transistor, with a portion contacting the surface of the first transistor and another portion contacting the sidewall.
- Creating a self-aligned interconnect structure (SIS) extending along the spacer material, where the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by enabling precise and reliable electrical connections.
Benefits
The benefits of this technology include enhanced device functionality, increased integration density, and improved overall performance of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and research and development of cutting-edge electronic devices.
Possible Prior Art
One possible prior art could be the use of spacer materials in semiconductor device manufacturing to create self-aligned structures and improve device performance.
Unanswered Questions
How does this method compare to traditional methods of manufacturing semiconductor devices?
This article does not provide a direct comparison between this method and traditional methods, leaving the reader to wonder about the specific advantages or disadvantages of this new approach.
What are the specific materials used in the spacer material and how do they impact the performance of the semiconductor device?
The article does not delve into the details of the spacer material composition or its effects on device performance, leaving a gap in understanding the material science aspect of the innovation.
Original Abstract Submitted
a method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. the method further includes depositing a spacer material against a sidewall of the first transistor. the method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. the method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. the method further includes manufacturing a self-aligned interconnect structure (sis) extending along the spacer material, wherein the spacer material separates a portion of the sis from the first transistor, and the first electrical connection directly contacts the sis.
