Sumitomo electric industries, ltd. (20240304739). SEMICONDUCTOR LIGHT-RECEIVING DEVICE simplified abstract

SEMICONDUCTOR LIGHT-RECEIVING DEVICE

Organization Name

sumitomo electric industries, ltd.

Inventor(s)

Takashi Kato of Osaka-shi (JP)

Yasuhiro Iguchi of Osaka-shi (JP)

SEMICONDUCTOR LIGHT-RECEIVING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240304739 titled 'SEMICONDUCTOR LIGHT-RECEIVING DEVICE

The semiconductor light-receiving device described in the abstract consists of various layers including an indium phosphide substrate, n-type and p-type III-V compound semiconductor layers, an optical absorption layer, a hole barrier layer, and an electron barrier layer.

• The device features a unique structure with multiple layers designed to enhance light absorption and electron-hole separation.
• The use of III-V compound semiconductors in combination with the indium phosphide substrate allows for efficient light reception and conversion.
• The hole barrier layer helps prevent recombination of electrons and holes, improving overall device performance.
• The electron barrier layer further enhances the separation of charge carriers, leading to increased efficiency in light detection.
• The optical absorption layer plays a crucial role in capturing incoming light and converting it into electrical signals.

Potential Applications: - Photodetectors - Solar cells - Optical communication systems

Problems Solved: - Enhanced light absorption and conversion efficiency - Improved charge carrier separation - Increased overall device performance

Benefits: - Higher sensitivity to light - Greater energy conversion efficiency - Improved signal-to-noise ratio

Commercial Applications: Title: Advanced Photodetectors for High-Performance Optical Systems This technology can be utilized in various commercial applications such as high-speed communication systems, remote sensing devices, and renewable energy systems. The improved efficiency and performance of the semiconductor light-receiving device make it a valuable component in cutting-edge technologies.

Questions about Semiconductor Light-Receiving Devices: 1. How does the structure of the device impact its overall performance? The multiple layers in the device work together to enhance light absorption and charge carrier separation, leading to improved efficiency and sensitivity.

2. What are the key advantages of using III-V compound semiconductors in this device? III-V compound semiconductors offer high electron mobility and excellent light absorption properties, making them ideal for light-receiving applications.

Original Abstract Submitted

a semiconductor light-receiving device includes an indium phosphide substrate, a first iii-v compound semiconductor layer of n-type, a second iii-v compound semiconductor layer of p-type, an optical absorption layer disposed between the first iii-v compound semiconductor layer and the second iii-v compound semiconductor layer, a hole barrier layer disposed between the first iii-v compound semiconductor layer and the optical absorption layer, and an electron barrier layer disposed between the second iii-v compound semiconductor layer and the optical absorption layer. the first iii-v compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer.