Sumitomo electric industries, ltd. (20240301585). SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract
Contents
SILICON CARBIDE EPITAXIAL SUBSTRATE
Organization Name
sumitomo electric industries, ltd.
Inventor(s)
SILICON CARBIDE EPITAXIAL SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240301585 titled 'SILICON CARBIDE EPITAXIAL SUBSTRATE
The patent application describes a structure with specific area densities and geometric features.
- The first area density is 0.03/cm or more.
- The second area density divided by the sum of the first and second area densities is 10% or less.
- The first recess extends in a straight line along a direction inclined with respect to certain directions.
- The first-direction-side end portion of the first recess is contiguous to a 4H polytype region.
- The second recess extends in a straight line along a direction inclined with respect to certain directions.
- The first-direction-side end portion of the second recess is contiguous to a 3C polytype region.
Potential Applications: - Semiconductor devices - Optoelectronic devices - Microelectromechanical systems (MEMS)
Problems Solved: - Improved performance of semiconductor devices - Enhanced efficiency of optoelectronic devices - Increased functionality of MEMS
Benefits: - Higher density structures - Improved device performance - Enhanced reliability
Commercial Applications: Title: "Advanced Semiconductor Structures for Enhanced Device Performance" This technology can be utilized in the semiconductor industry to create more efficient and reliable devices, leading to advancements in various electronic applications.
Questions about the technology: 1. How does the geometric design of the structure impact device performance? 2. What are the potential limitations of implementing this technology in semiconductor manufacturing processes?
Original Abstract Submitted
the first area density is 0.03/cmor more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less. as viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction, and a first-direction-side end portion of the first recess is contiguous to a 4h polytype region, and as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to a 3c polytype region.
