Sumitomo Electric Industries, Ltd. patent applications on September 12th, 2024
Patent Applications by Sumitomo Electric Industries, Ltd. on September 12th, 2024
Sumitomo Electric Industries, Ltd.: 19 patent applications
Sumitomo Electric Industries, Ltd. has applied for patents in the areas of B60L53/16 (2), B60R16/023 (2), C30B29/36 (2), C30B25/18 (2), C30B25/20 (2) B60L50/64 (1), G02F1/225 (1), H03K17/6871 (1), H02G15/013 (1), H01R13/5812 (1)
With keywords such as: layer, surface, semiconductor, area, density, resin, optical, direction, disposed, and portion in patent application abstracts.
Patent Applications by Sumitomo Electric Industries, Ltd.
Inventor(s): Takaya MIYASE of Osaka (JP) for sumitomo electric industries, ltd.
IPC Code(s): C30B25/20, C30B23/00, C30B25/18, C30B29/36
CPC Code(s): C30B25/20
Abstract: the first area density is 0.03/cmor more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less. as viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction, and a first-direction-side end portion of the first recess is contiguous to a 4h polytype region, and as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to a 3c polytype region.
Inventor(s): Yutaka HOSHINA of Osaka-shi (JP) for sumitomo electric industries, ltd., Kazuya TOKUDA of Osaka-shi (JP) for sumitomo electric industries, ltd., Yoshihiro SAITO of Osaka-shi (JP) for sumitomo electric industries, ltd.
IPC Code(s): G01N23/2273
CPC Code(s): G01N23/2273
Abstract: a data analysis device includes an input unit that receives a measured value of an optoelectronic signal from a photoelectron spectroscopic device measuring the optoelectronic signal generated from a sample by photoelectron spectroscopy and an analysis unit that analyzes the depth profile of the sample by minimizing a sum of square deviations between a theoretical value of the optoelectronic signal and the measured value of the optoelectronic signal using the theoretical value of the optoelectronic signal when the sample is modeled into a multilayer body including a plurality of layers. the analysis unit calculates a relative concentration so as to satisfy a maximum smoothness condition that the relative concentration of the chemical species of the sample smoothly changes in the plurality of layers of the multilayer body in minimizing the sum of square deviations.
Inventor(s): Yoshiki NISHIBAYASHI of Osaka (JP) for sumitomo electric industries, ltd., Hiromi NAKANISHI of Osaka (JP) for sumitomo electric industries, ltd., Hiroshige DEGUCHI of Kyoto (JP) for sumitomo electric industries, ltd., Tsukasa HAYASHI of Kyoto (JP) for sumitomo electric industries, ltd., Natsuo TATSUMI of Kyoto (JP) for sumitomo electric industries, ltd.
IPC Code(s): G01R33/26, G01R33/07
CPC Code(s): G01R33/26
Abstract: a diamond magnetic sensor unit includes: a sensor part that includes a diamond having a color center with electron spin; an excitation light irradiation part that irradiates the diamond with excitation light; and a detection part that detects radiated light from the color center of the diamond, wherein the detection part detects the radiated light caused by irradiation of the diamond with the excitation light by the excitation light irradiation part without the diamond being irradiated with electromagnetic waves, and a conductive member that is disposed 10 mm or more apart from the sensor part, and transmits the electromagnetic waves can be included.
Inventor(s): Noriaki IWAGUCHI of Osaka-shi, Osaka (JP) for sumitomo electric industries, ltd., Miho IKEGAWA of Osaka-shi, Osaka (JP) for sumitomo electric industries, ltd.
IPC Code(s): G02B6/02, C03C25/105, C03C25/1065, C03C25/285, C03C25/36
CPC Code(s): G02B6/02395
Abstract: an optical fiber comprises a glass fiber including a core and a cladding, and a coating resin layer for coating the glass fiber; the coating resin layer has a primary resin layer in contact with the glass fiber for coating the glass fiber, and a secondary resin layer for coating the primary resin layer; the primary resin layer includes a cured product of a first resin composition containing a silicone (meth)acrylate and a photopolymerization initiator; the secondary resin layer includes a cured product of a second resin composition containing a urethane (meth)acrylate and a photopolymerization initiator; and the amount of tin contained in the coating resin layer is 150 ppm or less in a mass ratio.
20240302606. OPTICAL DEVICE_simplified_abstract_(sumitomo electric industries, ltd.)
Inventor(s): Manabu SHIOZAKI of Osaka-Shi (JP) for sumitomo electric industries, ltd., Tomoya SAEKI of Osaka-Shi (JP) for sumitomo electric industries, ltd., Katsumi UESAKA of Osaka-Shi (JP) for sumitomo electric industries, ltd.
IPC Code(s): G02B6/42
CPC Code(s): G02B6/421
Abstract: disclosed is an optical device including a first lens and a second lens. the first lens of the optical device is joined to an end surface of an optical waveguide of an optical element to emit light emitted from the optical element. the second lens is optically coupled with the first lens to convert the light emitted from the first lens into collimated light.
20240302707. OPTICAL SEMICONDUCTOR DEVICE_simplified_abstract_(sumitomo electric industries, ltd.)
Inventor(s): Kosuke SEKIGUCHI of Osaka-shi (JP) for sumitomo electric industries, ltd., Keiji TANAKA of Osaka-shi (JP) for sumitomo electric industries, ltd.
IPC Code(s): G02F1/225, G02F1/21
CPC Code(s): G02F1/225
Abstract: an optical semiconductor device includes: an element portion provided on a principal surface of a substrate; first protruding portions provided on the principal surface; a resin body including a top surface and embedding the element portion and the first protruding portions; a wiring provided on the top surface; and a protective film covering the top surface and the wiring. the element portion includes a mesa protruding portion including a first semiconductor layer, and a mesa waveguide. the first protruding portions are separated from each other and each includes the first semiconductor layer. the wiring is provided between the first protruding portions and the element portion and includes a side surface adjacent to the first protruding portions. an angle formed by a first portion covering the side surface of the wiring and a second portion covering the top surface and connected to the first portion is acute.
Inventor(s): Toru MAEDA of Osaka (JP) for sumitomo electric industries, ltd., Miki MIYANAGA of Osaka (JP) for sumitomo electric industries, ltd., Daisuke KONDO of Osaka (JP) for sumitomo electric industries, ltd., Kei HIRAI of Osaka (JP) for sumitomo electric industries, ltd., Masayuki ITO of Yamagata (JP) for sumitomo electric industries, ltd., Shin-ichi YAMAGATA of Yamagata (JP) for sumitomo electric industries, ltd.
IPC Code(s): H01L23/373, B22F7/04, B32B15/01, H01L21/48
CPC Code(s): H01L23/3735
Abstract: a composite material has a plate shape and has a first surface and a second surface. the second surface is opposite to the first surface. the composite material includes a plurality of first layers and at least one second layer. the first layers and the second layer are alternately layered along a thickness direction of the composite material such that the first layers are located at the first surface and the second surface. each of the first layers is a layer including copper. the second layer is a layer of a molybdenum powder compact impregnated with copper. a compressive residual stress of 50 mpa or less acts on each of the first layer located at the first surface and the first layer located at the second surface.
Inventor(s): Takaya MIYASE of Osaka (JP) for sumitomo electric industries, ltd., Hideyuki HISANABE of Osaka (JP) for sumitomo electric industries, ltd.
IPC Code(s): H01L29/32, C30B25/18, C30B25/20, C30B29/36, H01L29/16
CPC Code(s): H01L29/32
Abstract: a silicon carbide epitaxial layer includes a buffer layer in contact with the silicon carbide substrate, a transition layer disposed on the buffer layer, and a drift layer disposed on the transition layer. an area density of the first defect is a first area density, and an area density of the second defect is a second area density, the first area density is 0.03/cmor more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is less than 2.91%. the first defect, as viewed perpendicularly to the main surface, is shaped to bifurcate from a first origin. no recessed groove is present on an imaginary line segment connecting both ends of the first defect.
Inventor(s): Takashi KATO of Osaka-shi (JP) for sumitomo electric industries, ltd., Yasuhiro IGUCHI of Osaka-shi (JP) for sumitomo electric industries, ltd.
IPC Code(s): H01L31/0304, H01L31/0216, H01L31/0352
CPC Code(s): H01L31/03046
Abstract: a semiconductor light-receiving device includes an indium phosphide substrate, a first iii-v compound semiconductor layer of n-type, a second iii-v compound semiconductor layer of p-type, an optical absorption layer disposed between the first iii-v compound semiconductor layer and the second iii-v compound semiconductor layer, a hole barrier layer disposed between the first iii-v compound semiconductor layer and the optical absorption layer, and an electron barrier layer disposed between the second iii-v compound semiconductor layer and the optical absorption layer. the first iii-v compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer.
Inventor(s): Naoya KODA of Osaka-shi, Osaka (JP) for sumitomo electric industries, ltd., Takahisa HIROTA of Osaka-shi, Osaka (JP) for sumitomo electric industries, ltd.
IPC Code(s): H03K17/687, B60L53/16, B60L53/60
CPC Code(s): H03K17/6871
Abstract: a switching device is mounted in a vehicle, and disposed between a connector connected to a dc power source, and a storage battery. the switching device includes: a transmission path connecting the connector and the storage battery; a semiconductor relay disposed on the transmission path; a switch disposed on the transmission path; a first sensor configured to measure a current flowing through the semiconductor relay, or a voltage of the semiconductor relay; and a controller configured to control opening and closing of the semiconductor relay. the switch is controlled by an external control signal, and the controller controls the semiconductor relay, based on the control signal and a measurement value of the first sensor.
Sumitomo Electric Industries, Ltd. patent applications on September 12th, 2024
- Sumitomo Electric Industries, Ltd.
- C30B25/20
- C30B23/00
- C30B25/18
- C30B29/36
- CPC C30B25/20
- Sumitomo electric industries, ltd.
- G01N23/2273
- CPC G01N23/2273
- G01R33/26
- G01R33/07
- CPC G01R33/26
- G02B6/02
- C03C25/105
- C03C25/1065
- C03C25/285
- C03C25/36
- CPC G02B6/02395
- G02B6/42
- CPC G02B6/421
- G02F1/225
- G02F1/21
- CPC G02F1/225
- H01L23/373
- B22F7/04
- B32B15/01
- H01L21/48
- CPC H01L23/3735
- H01L29/32
- H01L29/16
- CPC H01L29/32
- H01L31/0304
- H01L31/0216
- H01L31/0352
- CPC H01L31/03046
- H03K17/687
- B60L53/16
- B60L53/60
- CPC H03K17/6871
- B60R16/023
