Stmicroelectronics international n.v. (20250103081). CORRECTION CIRCUIT FOR BANDGAP CIRCUIT
CORRECTION CIRCUIT FOR BANDGAP CIRCUIT
Organization Name
stmicroelectronics international n.v.
Inventor(s)
Sarah Verhaeren of Le Versoud FR
CORRECTION CIRCUIT FOR BANDGAP CIRCUIT
This abstract first appeared for US patent application 20250103081 titled 'CORRECTION CIRCUIT FOR BANDGAP CIRCUIT
Original Abstract Submitted
the present description concerns a correction circuit for a bandgap circuit comprising a first bipolar transistor and a second bipolar transistor, the bandgap circuit being configured to deliver a temperature-stable dc voltage based on the first and second bipolar transistors, the correction circuit being configured to generate a correction current equal to a difference in the base currents of said first and second transistors, and inject the correction current on the emitter of one of said first and second bipolar transistors to correct an error on the temperature-stable voltage resulting from a current gain difference between said first and second bipolar transistors.