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• Intel corporation (20250008852). TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
  ...his of Hillsboro OR (US)]][[Category:Punyashloka Debashis of Hillsboro OR (US)]] .... Adams of Portland OR (US)]][[Category:Dominique A. Adams of Portland OR (US)]]
  4 KB (597 words) - 03:51, 17 February 2025
• 18346212. TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT (Intel Corporation)
  ...his of Hillsboro OR (US)]][[Category:Punyashloka Debashis of Hillsboro OR (US)]] .... Adams of Portland OR (US)]][[Category:Dominique A. Adams of Portland OR (US)]]
  4 KB (597 words) - 10:20, 17 February 2025
• 18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation)
  ...IL (US)|Hojoon Ryu of Urbana IL (US)]][[Category:Hojoon Ryu of Urbana IL (US)]] ...his of Hillsboro OR (US)]][[Category:Punyashloka Debashis of Hillsboro OR (US)]]
  4 KB (532 words) - 06:37, 6 July 2024
• Intel corporation (20240222506). FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract
  ...IL (US)|Hojoon Ryu of Urbana IL (US)]][[Category:Hojoon Ryu of Urbana IL (US)]] ...his of Hillsboro OR (US)]][[Category:Punyashloka Debashis of Hillsboro OR (US)]]
  4 KB (563 words) - 05:41, 4 July 2024
• Intel Corporation patent applications on July 4th, 2024
  Intel Corporation has applied for patents in the areas of [[:Category:H01L23/00|H01L23/00]] (21), [[:Category:H01L23/498|H01L23/498]] ...Teuchitlan (MX) for intel corporation, Javier Felip Leon of Hillsboro OR (US) for intel corporation
  209 KB (32,200 words) - 05:44, 4 July 2024
• Intel Corporation patent applications on January 2nd, 2025
  Intel Corporation has applied for patents in the areas of [[:Category:H01L23/00|H01L23/00]] (17), [[:Category:H01L25/065|H01L25/065]] ...uadalajara (MX) for intel corporation, Javier Felip Leon of Hillsboro OR (US) for intel corporation
  214 KB (32,596 words) - 03:51, 17 February 2025