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Samsung electronics co., ltd. (20250095761). HIGH VOLTAGE TRANSFER DEVICE AND A MEMORY DEVICE INCLUDING THE SAME
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2 KB (244 words) - 02:31, 24 March 2025
18636542. HIGH VOLTAGE TRANSFER DEVICE AND A MEMORY DEVICE INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
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2 KB (244 words) - 04:41, 24 March 2025
Taiwan semiconductor manufacturing co., ltd. (20250087287). MEMORY DEVICES WITH STACKING CIRCUITS AND METHODS OF OPERATING THEREOF
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2 KB (229 words) - 02:45, 15 March 2025
18405953. MEMORY DEVICES WITH STACKING CIRCUITS AND METHODS OF OPERATING THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
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2 KB (229 words) - 04:05, 15 March 2025
Taiwan semiconductor manufacturing co., ltd. (20250104785). NON-VOLATILE MEMORY CIRCUIT AND METHOD
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2 KB (271 words) - 03:48, 30 March 2025
18973767. NON-VOLATILE MEMORY CIRCUIT AND METHOD (Taiwan Semiconductor Manufacturing Co., Ltd.)
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2 KB (271 words) - 04:46, 31 March 2025
Taiwan semiconductor manufacturing company, ltd. (20250062251). PUF MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
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1 KB (204 words) - 04:25, 19 March 2025
Taiwan semiconductor manufacturing co., ltd. (20250087285). SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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2 KB (222 words) - 02:45, 15 March 2025
18465815. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
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2 KB (222 words) - 04:05, 15 March 2025
Taiwan semiconductor manufacturing company, ltd. (20250006282). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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2 KB (217 words) - 03:52, 25 March 2025
Samsung electronics co., ltd. (20250070019). INTEGRATED CIRCUIT INCLUDING ELECTRONIC FUSE BIT CELL
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1 KB (211 words) - 06:59, 17 March 2025
18753168. INTEGRATED CIRCUIT INCLUDING ELECTRONIC FUSE BIT CELL (SAMSUNG ELECTRONICS CO., LTD.)
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1 KB (211 words) - 09:21, 17 March 2025
18428920. ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
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2 KB (244 words) - 10:19, 17 March 2025
Taiwan semiconductor manufacturing co., ltd. (20250105173). ONE-TIME-PROGRAMMABLE MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
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2 KB (270 words) - 03:50, 30 March 2025
18405929. ONE-TIME-PROGRAMMABLE MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
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2 KB (270 words) - 04:46, 31 March 2025
Texas instruments incorporated (20250006283). RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUFACTURE
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2 KB (263 words) - 04:01, 25 March 2025
Taiwan semiconductor manufacturing co., ltd. (20250096160). GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAMMABLE MEMORY DEVICES WITH BACK-END-OF-LINE TRANSISTORS
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2 KB (218 words) - 03:32, 24 March 2025
18412505. GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAMMABLE MEMORY DEVICES WITH BACK-END-OF-LINE TRANSISTORS (Taiwan Semiconductor Manufacturing Co., Ltd.)
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2 KB (218 words) - 04:52, 24 March 2025
18410190. EFUSE CELLS WITH BACKSIDE POWER RAILS (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
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2 KB (256 words) - 10:19, 17 March 2025
US Patent Application 18446684. ANTI-FUSE ARRAY simplified abstract
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2 KB (337 words) - 15:12, 30 November 2023

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