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Micron technology, inc. (20250095746). DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT
[[Category:G11C16/12]] [[Category:G11C16/08]] ...

1 KB (196 words) - 03:58, 24 March 2025
18967011. DYNAMIC STEP VOLTAGE LEVEL ADJUSTMENT (Micron Technology, Inc.)
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1 KB (196 words) - 05:01, 24 March 2025
Micron technology, inc. (20250087249). INTERCONNECTIONS FOR 3D MEMORY
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1 KB (197 words) - 03:09, 15 March 2025
18811059. INTERCONNECTIONS FOR 3D MEMORY (Micron Technology, Inc.)
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1 KB (197 words) - 04:10, 15 March 2025
Quantum Error Correction patent applications on March 13th, 2025
IPC Code(s): G06F3/06, G11C5/06, G11C11/56, G11C16/04, G11C16/12, G11C16/26, G11C16/34 ...Category:G11C16/04]][[Category:G11C16/12]][[Category:G11C16/26]][[Category:G11C16/34]][[Category:CPC_G11C16/34]][[Category:Yangtze Memory Technologies Co., L ...

3 KB (466 words) - 16:38, 14 March 2025
Quantum Error Correction patent applications on 14th Mar 2025
IPC Code(s): G06F3/06, G11C5/06, G11C11/56, G11C16/04, G11C16/12, G11C16/26, G11C16/34 ...Category:G11C16/04]][[Category:G11C16/12]][[Category:G11C16/26]][[Category:G11C16/34]][[Category:CPC_G11C16/34]][[Category:Yangtze Memory Technologies Co., L ...

3 KB (466 words) - 05:29, 15 March 2025
Western digital technologies, inc. (20240420773). READ POWER SAVINGS BY TEMPORARILY DISABLING BITLINE VOLTAGE
[[Category:G11C16/12]] [[Category:G11C16/04]] ...

2 KB (279 words) - 06:58, 19 December 2024
18229705. READ POWER SAVINGS BY TEMPORARILY DISABLING BITLINE VOLTAGE (Western Digital Technologies, Inc.)
[[Category:G11C16/12]] [[Category:G11C16/04]] ...

2 KB (279 words) - 07:25, 19 December 2024
Micron technology, inc. (20250014649). Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability
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2 KB (235 words) - 09:59, 25 March 2025
18888899. Weight Calibration Check for Integrated Circuit Devices having Analog Inference Capability (Micron Technology, Inc.)
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2 KB (235 words) - 08:22, 18 February 2025
Yangtze Memory Technologies Co., Ltd. (20250085855). BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY
[[Category:G11C16/04]] [[Category:G11C16/12]] ...

2 KB (284 words) - 02:34, 15 March 2025
18959467. BEST READ REFERENCE VOLTAGE SEARCH OF 3D NAND MEMORY (Yangtze Memory Technologies Co., Ltd.)
[[Category:G11C16/04]] [[Category:G11C16/12]] ...

2 KB (284 words) - 05:02, 15 March 2025
Samsung electronics co., ltd. (20250069668). MEMORY DEVICE FOR PROGRAM DISTURBANCE SUPPRESSION AND PROGRAMMING METHOD THEREOF
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2 KB (254 words) - 06:58, 17 March 2025
18814030. MEMORY DEVICE FOR PROGRAM DISTURBANCE SUPPRESSION AND PROGRAMMING METHOD THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
[[Category:G11C16/12]] [[Category:G11C16/04]] ...

2 KB (254 words) - 09:21, 17 March 2025
Kioxia corporation (20250095756). SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND CONTROL METHOD
[[Category:G11C16/34]] [[Category:G11C16/10]] ...

1 KB (228 words) - 03:47, 24 March 2025
18821402. SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND CONTROL METHOD (Kioxia Corporation)
[[Category:G11C16/34]] [[Category:G11C16/10]] ...

1 KB (228 words) - 04:57, 24 March 2025
17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
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4 KB (529 words) - 03:30, 2 January 2024
18581018. NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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4 KB (546 words) - 05:27, 14 June 2024
18612239. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
[[Category:G11C16/16]] [[Category:G11C16/04]] ...

4 KB (495 words) - 03:46, 23 August 2024
Samsung electronics co., ltd. (20240194243). NONVOLATILE MEMORY DEVICES simplified abstract
[[Category:G11C7/12]] [[Category:G11C8/12]] ...

4 KB (587 words) - 08:43, 13 June 2024

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