18516521. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Meng-Han Lin of Hsinchu City (TW)
Chia-En Huang of Xinfeng Township (TW)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516521 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The semiconductor device described in the abstract includes a first transistor, a second transistor, and a memory component. The first transistor has a high-k gate dielectric layer and a metal gate, while the second transistor has doped silicon gates. The memory component is electrically coupled to the second source/drain region.
- First transistor:
- Includes a first silicon layer, high-k gate dielectric layer, metal gate, and source/drain regions.
- Second transistor:
- Includes a second silicon layer, silicon oxide layer, doped silicon gates, and source/drain regions.
- Memory component:
- Positioned above the transistors and connected to the second source/drain region.
Potential Applications
The technology described in this patent application could be applied in: - Advanced memory devices - High-performance computing systems - Semiconductor manufacturing industry
Problems Solved
This technology helps in: - Enhancing transistor performance - Improving memory component integration - Increasing overall device efficiency
Benefits
The benefits of this technology include: - Higher speed and efficiency - Enhanced memory capabilities - Improved semiconductor device reliability
Potential Commercial Applications
The potential commercial applications of this technology could be in: - Consumer electronics - Data storage devices - Automotive electronics
Possible Prior Art
One possible prior art related to this technology is the integration of high-k gate dielectric layers in semiconductor devices to improve performance and reduce power consumption.
Unanswered Questions
How does this technology impact power consumption in semiconductor devices?
The abstract does not provide specific details on the power consumption benefits of this technology. Further research or experimentation may be needed to determine the exact impact on power efficiency.
What are the specific memory capabilities of the memory component mentioned in the abstract?
The abstract does not elaborate on the memory component's specific capabilities. Additional information or testing may be required to understand the memory storage and retrieval functions of this component.
Original Abstract Submitted
A semiconductor device includes a first transistor, a second transistor, and a memory component. The first transistor includes a first silicon layer, a high-k gate dielectric layer above the first silicon layer, a first metal gate above the high-k gate dielectric layer, and first source/drain regions within the first silicon layer. The second transistor includes a second silicon layer, a first silicon oxide layer above the second silicon layer, a plurality of first doped silicon gates above the first silicon oxide layer, a plurality of second doped silicon gates above the first silicon oxide layer and alternately arranged with the plurality of first doped silicon gates, and second source/drain regions within the second silicon layer. The memory component is above the first and second transistors, and electrically coupled to the second source or drain region.
