Sony semiconductor solutions corporation (20240415033). STORAGE ELEMENT AND STORAGE DEVICE

STORAGE ELEMENT AND STORAGE DEVICE

Organization Name

sony semiconductor solutions corporation

Inventor(s)

Tetsuya Mizuguchi of Kanagawa (JP)

Katsuhisa Aratani of Kanagawa (JP)

Kazuhiro Ohba of Tokyo (JP)

Tetsuo Nakayama of Kanagawa (JP)

Hiroaki Sei of Kanagawa (JP)

STORAGE ELEMENT AND STORAGE DEVICE

This abstract first appeared for US patent application 20240415033 titled 'STORAGE ELEMENT AND STORAGE DEVICE

Original Abstract Submitted

a storage element includes a first electrode, a resistance change layer, a first interface layer, and a first heat shield layer. the resistance change layer is formed on the first electrode, contains at least tellurium, antimony, and germanium, and is changeable in a resistance value. the first interface layer is formed between the first electrode and the resistance change layer. the first heat shield layer is formed between the first electrode and the first interface layer, has electrical conductivity, contains boron, and blocks heat transfer from the resistance change layer.