Sony semiconductor solutions corporation (20240339143). SEMICONDUCTOR STORAGE APPARATUS simplified abstract

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SEMICONDUCTOR STORAGE APPARATUS

Organization Name

sony semiconductor solutions corporation

Inventor(s)

TARO Tatsuno of KANAGAWA (JP)

SEMICONDUCTOR STORAGE APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240339143 titled 'SEMICONDUCTOR STORAGE APPARATUS

Simplified Explanation:

This patent application describes a semiconductor storage apparatus with memory cells and a control circuit that utilizes an asymmetric property of a writing error rate curve line to control the writing process of magnetization reversal memory devices.

  • The semiconductor storage apparatus includes memory cells with magnetization reversal memory devices and switch devices.
  • The control circuit regulates the flow of current to the memory devices based on the writing error rate curve line's behavior with varying voltages.
  • By leveraging the asymmetric property of the curve line, the control circuit optimizes the writing process for improved performance.

Key Features and Innovation:

  • Utilization of an asymmetric property of a writing error rate curve line for writing control.
  • Integration of magnetization reversal memory devices and switch devices in memory cells.
  • Optimization of the writing process based on the behavior of the curve line with different voltages.

Potential Applications:

  • Data storage devices
  • Embedded systems
  • Internet of Things (IoT) devices

Problems Solved:

  • Enhancing writing performance in semiconductor storage apparatus.
  • Improving data reliability in memory cells.
  • Optimizing the control of current flow in memory devices.

Benefits:

  • Increased writing accuracy
  • Enhanced data retention
  • Improved overall performance of semiconductor storage apparatus

Commercial Applications:

Potential commercial applications of this technology include:

  • Solid-state drives (SSDs)
  • Smartphones and tablets
  • Wearable devices

Prior Art:

Prior art related to this technology may include research on writing error rate curves in memory devices and control mechanisms for semiconductor storage apparatus.

Frequently Updated Research:

Stay updated on the latest advancements in writing control mechanisms for memory devices and semiconductor storage apparatus to ensure optimal performance and reliability.

Questions about Semiconductor Storage Apparatus:

1. How does the asymmetric property of the writing error rate curve line impact the writing process in memory cells? 2. What are the potential implications of optimizing the control of current flow in magnetization reversal memory devices for data storage applications?


Original Abstract Submitted

a semiconductor storage apparatus according to one embodiment of the present disclosure includes a plurality of memory cells and a control circuit. each of the memory cells includes a magnetization reversal memory device and a first switch device that controls a current to flow to the magnetization reversal memory device. the control circuit performs a writing control based on an asymmetric property of a writing error rate curve line with respect to a writing voltage of the magnetization reversal memory device.