Sony group corporation (20240313506). SURFACE EMITTING DEVICE simplified abstract
Contents
SURFACE EMITTING DEVICE
Organization Name
Inventor(s)
Hiroshi Nakajima of Tokyo (JP)
Michinori Shiomi of Tokyo (JP)
Tomomasa Watanabe of Tokyo (JP)
Masashi Takanohashi of Tokyo (JP)
Mikihiro Yokozeki of Tokyo (JP)
SURFACE EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240313506 titled 'SURFACE EMITTING DEVICE
The surface emitting device described in the patent application consists of multiple semiconductor layers and reflective layers, along with a tunnel junction layer and a dielectric layer with an aperture.
- First reflective layer
- First semiconductor layer of a first conductive type
- Active layer
- Second semiconductor layer of a second conductive type
- Tunnel junction layer
- Third semiconductor layer of the first conductive type
- Second reflective layer
- Dielectric layer with an aperture
- Fourth semiconductor layer within the aperture
Potential Applications: - Optoelectronic devices - Light-emitting diodes (LEDs) - Laser diodes - Photodetectors
Problems Solved: - Enhanced light emission efficiency - Improved device performance - Better control of light output
Benefits: - Higher brightness - Lower power consumption - Longer device lifespan
Commercial Applications: Title: "Advanced Surface Emitting Devices for Optoelectronic Applications" This technology can be utilized in various commercial applications such as: - Display technology - Communication systems - Medical devices - Automotive lighting
Questions about the technology: 1. How does the dielectric layer with an aperture contribute to the performance of the device?
The dielectric layer helps in controlling the flow of charge carriers and enhances the efficiency of light emission.
2. What advantages does the selective growth of the semiconductor layers provide in this device?
Selective growth allows for precise control over the structure and properties of the semiconductor layers, leading to improved device performance.
Original Abstract Submitted
a surface emitting device according to an embodiment of the present disclosure includes: a first reflective layer; a first semiconductor layer of a first conductive type, the first semiconductor layer being stacked on the first reflective layer; an active layer stacked on the first semiconductor layer; a second semiconductor layer of a second conductive type that is a conductive type opposite to the first conductive type, the second semiconductor layer being stacked on the active layer; a tunnel junction layer stacked on the second semiconductor layer; a third semiconductor layer of the first conductive type, the third semiconductor layer being stacked on the tunnel junction layer; a second reflective layer stacked on the third semiconductor layer, at a side opposite to a side of the first reflective layer; a dielectric layer formed, through non-selective oxidation, between the second semiconductor layer and the third semiconductor layer or between the third semiconductor layer and the second reflective layer, the dielectric layer having an aperture penetrating through in a thickness direction; and a fourth semiconductor layer stacked, within the aperture, on the second semiconductor layer or the third semiconductor layer and formed through selective growth of the second semiconductor layer or the third semiconductor layer.
