Snap inc. (20240243232). MICRO-LED DBR FABRICATION BY ELECTROCHEMICAL ETCHING simplified abstract
Contents
MICRO-LED DBR FABRICATION BY ELECTROCHEMICAL ETCHING
Organization Name
Inventor(s)
Nicolas Poyiatzis of Sheffield (GB)
MICRO-LED DBR FABRICATION BY ELECTROCHEMICAL ETCHING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243232 titled 'MICRO-LED DBR FABRICATION BY ELECTROCHEMICAL ETCHING
Simplified Explanation: The patent application describes a method of fabricating a semiconductor device with a distributed Bragg reflector (DBR) by creating a nanoporous structure within the DBR layers through electrochemical etching.
- The method involves depositing multiple DBR layers on a surface, creating apertures to expose each layer, and then using electrochemical etching to transform at least one layer into a nanoporous structure.
Key Features and Innovation:
- Fabricating a semiconductor device with a distributed Bragg reflector (DBR).
- Creating a nanoporous structure within the DBR layers.
- Utilizing electrochemical etching to transform DBR layers.
Potential Applications: The technology can be applied in:
- Optoelectronic devices.
- Photonic integrated circuits.
- Optical communication systems.
Problems Solved:
- Enhancing the performance of semiconductor devices.
- Improving light reflection and transmission properties.
- Increasing the efficiency of optical components.
Benefits:
- Improved optical properties.
- Enhanced device performance.
- Increased efficiency in optical systems.
Commercial Applications: Potential commercial uses include:
- Manufacturing of high-performance optoelectronic devices.
- Development of advanced photonic integrated circuits.
- Integration into optical communication networks.
Prior Art: Prior research may include studies on:
- Electrochemical etching techniques in semiconductor fabrication.
- Nanoporous structures in optical devices.
- Distributed Bragg reflectors in semiconductor technology.
Frequently Updated Research: Ongoing research may focus on:
- Optimizing the fabrication process for nanoporous structures.
- Exploring new applications for DBR technology.
- Investigating the impact of nanoporous structures on device performance.
Questions about Semiconductor Device with Distributed Bragg Reflector: 1. What are the potential applications of a semiconductor device with a distributed Bragg reflector? 2. How does electrochemical etching contribute to the fabrication of nanoporous structures in DBR layers?
Original Abstract Submitted
a method of fabricating a semiconductor device having a distributed bragg reflector (dbr) includes depositing, above a dbr deposition surface, a plurality of dbr layers to form a dbr, forming at least one aperture extending through the plurality of dbr layers to expose each dbr layer, and applying electrochemical etching to the plurality of dbr layers via the at least one aperture, thereby transforming at least one dbr layer of the plurality of dbr layers into a nanoporous structure.
