Sk hynix inc. (20250008851). SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING SELECTOR
Contents
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING SELECTOR
Organization Name
Inventor(s)
Jeong Myeong Kim of Icheon-si (KR)
Cha Deok Dong of Icheon-si (KR)
Keo Rock Choi of Icheon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING SELECTOR
This abstract first appeared for US patent application 20250008851 titled 'SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING SELECTOR
Original Abstract Submitted
a semiconductor device includes a plurality of memory cells. each memory cell includes: a first electrode layer; a second electrode layer; a memory layer electrically connected to the second electrode layer and configured to store data; a selector layer interposed between the first electrode layer and the second electrode layer and configured to control an access to the memory layer, the selector layer including an insulating material layer doped with a dopant, wherein at least one of the first electrode layer and the second electrode layer includes a first sub-electrode layer, and a second sub-electrode layer interposed between the first sub-electrode layer and the selector layer and including a material having a work function greater than a work function of the first sub-electrode layer.
