Sk hynix inc. (20240349503). MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Won Geun Choi of Icheon-si Gyeonggi-do (KR)
Rho Gyu Kwak of Icheon-si Gyeonggi-do (KR)
Jung Shik Jang of Icheon-si Gyeonggi-do (KR)
Seok Min Choi of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240349503 titled 'MEMORY DEVICE
The memory device described in the patent application consists of multiple conductive layers, support structures that penetrate these layers, contact holes that expose the conductive layers and support structures, and contacts placed within the contact holes.
- The memory device features multiple conductive layers for enhanced functionality.
- Support structures are integrated to provide structural integrity and support to the device.
- Contact holes allow for access to the conductive layers and support structures.
- Contacts placed within the contact holes facilitate connections within the memory device.
- The manufacturing method involves the precise assembly of these components to create a functional memory device.
Potential Applications: - This technology can be utilized in various electronic devices such as smartphones, computers, and servers. - It can also be used in automotive electronics, medical devices, and industrial equipment.
Problems Solved: - Provides a reliable and efficient memory storage solution. - Enhances the performance and functionality of electronic devices.
Benefits: - Improved data storage capacity and speed. - Enhanced reliability and durability of memory devices. - Increased efficiency in electronic device operations.
Commercial Applications: Title: Advanced Memory Devices for Enhanced Performance in Electronic Devices This technology can be commercialized by memory device manufacturers to create high-performance electronic devices with improved memory storage capabilities. The market implications include increased demand for faster and more reliable memory solutions in various industries.
Prior Art: Readers can explore prior patents related to memory devices, conductive layers, and support structures to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Researchers are constantly working on improving memory device technology, including advancements in conductive materials, support structures, and contact placement for enhanced performance and reliability.
Questions about Memory Devices: 1. How does the integration of support structures improve the functionality of memory devices? Support structures provide structural integrity and support to the memory device, ensuring its durability and reliability.
2. What are the key factors to consider when designing contact holes in memory devices? Design considerations for contact holes include size, placement, and material compatibility to ensure efficient connections within the device.
Original Abstract Submitted
there are provided a memory device and a manufacturing method of a memory device. the memory device includes a plurality of conductive layers, support structures penetrating the plurality of conductive layers, a contact hole exposing any one of the plurality of conductive layers and any one of the plurality of support structures, and a contact disposed in the contact hole.
