Sk hynix inc. (20240339512). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339512 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract features a stacked structure consisting of alternating first conductive layers and insulating layers, with second conductive layers on top. First openings pass through the second conductive layers and the stacked structure, housing second conductive patterns and data storage patterns underneath, along with channel layers within them.
- Stacked structure with alternating first conductive layers and insulating layers
- Second conductive layers on top of the stacked structure
- First openings passing through the second conductive layers and the stacked structure
- Second conductive patterns and data storage patterns formed in the first openings
- Channel layers within the data storage patterns and second conductive patterns
Potential Applications: - Memory devices - Data storage systems - Semiconductor manufacturing
Problems Solved: - Enhanced data storage capacity - Improved semiconductor device performance
Benefits: - Increased efficiency in data storage - Higher performance in semiconductor devices
Commercial Applications: Title: Advanced Memory Devices for Enhanced Data Storage This technology can be utilized in the development of high-capacity memory devices for various commercial applications, such as data centers, consumer electronics, and telecommunications.
Questions about the technology: 1. How does the stacked structure improve data storage capacity? The stacked structure allows for efficient layering of conductive and insulating layers, maximizing the storage capacity within a compact space.
2. What advantages do the channel layers provide in the semiconductor device? Channel layers enhance the performance of the device by facilitating the flow of electrical signals between the data storage patterns and the second conductive layers.
Original Abstract Submitted
a semiconductor device includes a stacked structure with first conductive layers and insulating layers that are stacked alternately with each other, second conductive layers located on the stacked structure, first openings passing through the second conductive layers and the stacked structure and having a first width, second conductive patterns formed in the first openings and located on the stacked structure to be electrically coupled to the second conductive layers, data storage patterns formed in the first openings and located under the second conductive patterns, and channel layers formed in the data storage patterns and the second conductive patterns.
