Sk hynix inc. (20240339135). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339135 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a memory cell with a variable resistance layer, connected to a word line and a bit line that intersect each other.
- The device features a first contact plug, a word line extending in a first direction, a second contact plug, and a bit line extending in a second direction.
- The bit line includes a first protruding part that enters the memory cell, a second protruding part connected to the second contact plug, and a connection part linking the two protruding parts.
- The memory cell's variable resistance layer plays a crucial role in the device's operation and functionality.
Potential Applications: - This technology can be used in various memory storage applications, such as non-volatile memory devices. - It can also be applied in computing systems where fast and reliable data storage is essential.
Problems Solved: - The device addresses the need for efficient memory cells with variable resistance layers. - It provides a solution for enhancing data storage capabilities in semiconductor devices.
Benefits: - Improved performance and reliability in memory storage applications. - Enhanced data retention and retrieval capabilities in computing systems.
Commercial Applications: Title: "Advanced Memory Cell Technology for Enhanced Data Storage" This technology can be commercialized in the semiconductor industry for manufacturing memory devices with improved performance and reliability. It can cater to the growing demand for high-speed data storage solutions in various electronic devices.
Questions about the technology: 1. How does the variable resistance layer in the memory cell contribute to its functionality? 2. What are the potential implications of using this technology in computing systems?
Original Abstract Submitted
a semiconductor device may include a first contact plug, a word line electrically connected to the first contact plug and extending in a first direction, a second contact plug, a bit line extending in a second direction that intersects the first direction, and a memory cell disposed between the word line and the bit line and including a variable resistance layer. the bit line may include a first protruding part that protrudes into the memory cell, a second protruding part that is connected to the second contact plug, and a connection part that connects the first protruding part and the second protruding part and that extends in the second direction.
