Sk hynix inc. (20240324203). MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Won Geun Choi of Icheon-si Gyeonggi-do (KR)
Rho Gyu Kwak of Icheon-si Gyeonggi-do (KR)
Jung Shik Jang of Icheon-si Gyeonggi-do (KR)
Seok Min Choi of Icheon-si Gyeonggi-do (KR)
In Su Park of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324203 titled 'MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
The memory device described in the abstract consists of a complex structure involving multiple interlayer insulating layers and conductive layers for word lines, separated by an etch stop layer and word line contacts.
- The memory device includes a first stack structure with alternating insulating and conductive layers for first word lines.
- It also features a second stack structure with similar alternating layers for second word lines.
- A first etch stop layer is positioned between the first and second stack structures.
- Multiple word line contacts extend through the second stack structure and the etch stop layer to the inside of the first stack structure.
Potential Applications: - This memory device structure could be used in various electronic devices requiring high-density memory storage. - It may find applications in smartphones, tablets, laptops, and other computing devices.
Problems Solved: - The memory device addresses the need for efficient and compact memory storage solutions. - It provides a way to increase memory capacity without significantly increasing the physical size of the device.
Benefits: - Improved memory storage capacity in a compact form factor. - Enhanced performance and efficiency in electronic devices. - Potential cost savings due to optimized memory structure.
Commercial Applications: Title: Advanced Memory Device for High-Density Storage Solutions This technology could be utilized in the production of next-generation electronic devices, leading to increased competitiveness in the market. The compact design and efficient memory structure could attract manufacturers looking to enhance the performance of their products.
Questions about the technology: 1. How does the memory device's complex structure contribute to its performance and efficiency? 2. What are the potential challenges in manufacturing and integrating this memory device into electronic devices?
Original Abstract Submitted
there are provided a memory device and a manufacturing method thereof. the memory device includes: a first stack structure including a plurality of first interlayer insulating layers and a plurality of conductive layers for first word lines, which are alternately stacked; and a second stack structure including a plurality of second interlayer insulating layers and a plurality of conductive layers for second word lines, which are alternately stacked; a first etch stop layer disposed between the first stack structure and the second stack structure; and a plurality of first word line contacts extending to the inside of the first stack structure through the second stack structure and the first etch stop layer.
