Sk hynix inc. (20240324200). SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE simplified abstract
Contents
SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE
Organization Name
Inventor(s)
Chang Woo Kang of Icheon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240324200 titled 'SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE
The semiconductor device described in the abstract consists of a stacked structure with interlayer insulating layers and horizontal line layers, channel structures, and through electrodes connecting the horizontal line layers.
- The device includes a first logic structure with a lower pass transistor connected to the first through electrode and a second logic structure with an upper pass transistor connected to the second through electrode.
- The stacked structure allows for efficient integration of multiple components in a compact design.
- The channel structures facilitate the flow of electrical signals through the device.
- The through electrodes enable connections between different layers within the device.
- The logic structures enhance the functionality and performance of the semiconductor device.
Potential Applications: - This technology can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in automotive electronics, medical devices, and industrial equipment.
Problems Solved: - Improved integration of components in a semiconductor device. - Enhanced performance and functionality of electronic devices. - Increased efficiency in signal processing and data transmission.
Benefits: - Compact design for space-saving in electronic devices. - Enhanced performance and functionality. - Improved reliability and durability of electronic components.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronic Performance This technology can be utilized in the consumer electronics industry to develop faster and more efficient devices. It can also benefit manufacturers of automotive electronics, medical devices, and industrial equipment by improving the performance and reliability of their products.
Prior Art: Readers can explore prior art related to semiconductor devices, stacked structures, and logic structures in the field of electronics and semiconductor technology.
Frequently Updated Research: Researchers are constantly working on improving semiconductor devices by enhancing their performance, efficiency, and reliability. Stay updated on the latest advancements in the field to leverage the benefits of this technology.
Questions about Semiconductor Devices: 1. How does the integration of logic structures improve the functionality of semiconductor devices? - The integration of logic structures enhances the processing capabilities of semiconductor devices by enabling complex operations and functions.
2. What are the potential challenges in implementing stacked structures in semiconductor devices? - Some challenges in implementing stacked structures include ensuring proper alignment of layers, managing heat dissipation, and maintaining signal integrity throughout the device.
Original Abstract Submitted
a semiconductor device may include a stacked structure including a plurality of interlayer insulating layers and a plurality of horizontal line layers alternately stacked, a plurality of channel structures passing through the plurality of interlayer insulating layers and the plurality of horizontal line layers, and a first through electrode and a second through electrode passing through the plurality of interlayer insulating layers and the plurality of horizontal line layers and connected to the plurality of horizontal line layers. there may be provided a first logic structure which is disposed under the stacked structure and includes a first lower pass transistor connected to the first through electrode. in addition, there may be provided a second logic structure which is disposed on the stacked structure and includes a first upper pass transistor connected to the second through electrode.
