Sk hynix inc. (20240251562). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

sk hynix inc.

Inventor(s)

Nam Jae Lee of Cheongju-si Chungcheongbuk-do (KR)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240251562 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The semiconductor device described in the abstract includes first and second vertical conductive patterns that are isolated from each other by a first slit. Additionally, the device includes at least one first half conductive pattern extending towards a first region on one side of the first slit from the first vertical conductive pattern, and at least one second half conductive pattern extending towards a second region on the other side of the first slit from the second vertical conductive pattern.

  • First and second vertical conductive patterns isolated by a first slit
  • At least one first half conductive pattern extending towards a first region
  • At least one second half conductive pattern extending towards a second region
  • Innovative design for semiconductor device manufacturing
  • Potential for improved performance and efficiency in electronic devices

Potential Applications: This technology could be applied in the manufacturing of various electronic devices such as smartphones, tablets, and computers.

Problems Solved: This technology addresses the need for more efficient and compact semiconductor devices with improved performance.

Benefits: The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced manufacturing costs.

Commercial Applications: This technology could have significant commercial applications in the consumer electronics industry, leading to the development of more advanced and efficient electronic devices.

Questions about the technology: 1. How does this semiconductor device design differ from traditional designs? 2. What specific advantages does this technology offer in terms of device performance and efficiency?


Original Abstract Submitted

a semiconductor device and a method of manufacturing a semiconductor device may be provided. the semiconductor device may include first and second vertical conductive patterns isolated from each other by a first slit. the semiconductor device may include at least one first half conductive pattern extending toward a first region disposed at one side of the first slit from the first vertical conductive pattern. the semiconductor device may include at least one second half conductive pattern extending toward a second region disposed at the other side of the first slit from the second vertical conductive pattern.