Sk hynix inc. (20240251557). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jin Ha Kim of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240251557 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a stacked structure with conductive and insulating layers alternately stacked, and a channel layer running through the structure. The channel layer is a single layer that includes a first GIDL region, a cell region, and a second GIDL region, with the first GIDL region being thicker than the cell region and the second GIDL region.
- The semiconductor device features a unique single-layer channel design with distinct regions of varying thickness.
- The first GIDL region of the channel layer is thicker than both the cell region and the second GIDL region.
- The stacked structure includes conductive and insulating layers that are stacked alternately with each other.
- The channel layer passes through the stacked structure, providing a pathway for electrical conduction.
- This design potentially enhances the performance and efficiency of the semiconductor device.
Potential Applications: - This technology could be applied in the development of advanced semiconductor devices for various electronic applications. - It may find use in the manufacturing of high-performance integrated circuits and microprocessors.
Problems Solved: - The design addresses the need for improved conductivity and efficiency in semiconductor devices. - By optimizing the channel layer structure, the technology aims to enhance overall device performance.
Benefits: - Enhanced conductivity and efficiency in semiconductor devices. - Potential for improved performance and reliability in electronic applications.
Commercial Applications: Title: Advanced Semiconductor Devices with Optimized Channel Layer This technology could have significant implications in the semiconductor industry, particularly in the development of high-performance electronic devices. It may lead to the creation of more efficient and reliable integrated circuits, benefiting various sectors such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the thickness variation in the channel layer impact the overall performance of the semiconductor device? 2. What specific advantages does the single-layer channel design offer compared to traditional multi-layer structures?
Original Abstract Submitted
a semiconductor device includes a stacked structure including conductive layers and insulating layers alternately stacked with each other, and a channel layer passing through the stacked structure, wherein the channel layer is a single layer, the single layer including a first gidl region, a cell region, and a second gidl region, and the first gidl region has a greater thickness than each of the cell region and the second gidl region.
