Sk hynix inc. (20240244842). MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE simplified abstract
Contents
MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE
Organization Name
Inventor(s)
Dae Sung Eom of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240244842 titled 'MEMORY DEVICE AND METHOD OF MANUFACTURING THE MEMORY DEVICE
The memory device described in the abstract includes multiple layers and structures that allow for efficient data storage and retrieval. The device features a first conductive layer, a second conductive layer, and a plurality of channel structures that penetrate these layers.
- The first conductive layer extends in one direction, while the second conductive layer extends in a different direction, intersecting the first.
- A series of first channel structures penetrate the first conductive layer, spaced apart from each other in the first direction.
- Additionally, a series of second channel structures penetrate the second conductive layer, forming an interface with the first conductive layer.
Potential Applications: - This memory device could be used in various electronic devices such as smartphones, computers, and servers. - It could also be applied in data storage centers and cloud computing facilities.
Problems Solved: - The memory device offers a compact and efficient way to store and access data. - The structure of the device allows for faster data processing and retrieval.
Benefits: - Improved data storage capacity and speed. - Enhanced performance in electronic devices. - Cost-effective manufacturing process.
Commercial Applications: "Advanced Memory Device for High-Performance Electronics"
Questions about the technology: 1. How does the interface between the first and second conductive layers impact the overall performance of the memory device? 2. What are the potential challenges in scaling up the manufacturing process for mass production of these memory devices?
Original Abstract Submitted
provided herein is a memory device and a method of manufacturing the memory device. the memory device includes a first conductive layer extending in a first direction, a second conductive layer extending from the first conductive layer in a second direction intersecting the first direction, a plurality of first channel structures penetrating the first conductive layer and disposed to be spaced apart from each other in the first direction, and a plurality of second channel structures penetrating the second conductive layer, wherein the first conductive layer may form an interface with the second conductive layer, and the interface may be disposed between the plurality of first channel structures and the plurality of second channel structures.
