Sk hynix inc. (20240244841). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Cheongju-si Chungcheongbuk-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240244841 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a source structure, an etch prevention layer, bit lines, a stack structure, and a source contact structure.
- The source structure is formed on a base.
- The etch prevention layer is formed on the source structure.
- The stack structure, located between the etch prevention layer and the bit lines, consists of conductive and insulating layers stacked alternately.
- The source contact structure extends into the stack structure in a vertical direction to be connected to the source structure, and it includes polysilicon.
Potential Applications: - This semiconductor device could be used in various electronic devices such as smartphones, tablets, and computers. - It could also be applied in the automotive industry for advanced driver assistance systems and electric vehicles.
Problems Solved: - The device addresses the need for efficient and reliable semiconductor components in modern electronics. - It provides a solution for enhancing the performance and functionality of electronic devices.
Benefits: - Improved conductivity and insulation properties. - Enhanced reliability and durability of the semiconductor device. - Increased efficiency and performance in electronic applications.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronics This technology has significant commercial potential in the consumer electronics market, automotive industry, and other sectors requiring high-performance semiconductor components. The innovation could lead to the development of more advanced and efficient electronic devices, driving growth and innovation in various industries.
Questions about the technology: 1. How does the stack structure in the semiconductor device contribute to its overall performance? - The stack structure, consisting of conductive and insulating layers, plays a crucial role in enhancing the conductivity and insulation properties of the device, ultimately improving its overall performance and reliability.
2. What are the specific advantages of using polysilicon in the source contact structure of the semiconductor device? - Polysilicon offers excellent electrical properties, making it an ideal material for the source contact structure as it ensures reliable and efficient electrical connections within the device.
Original Abstract Submitted
a semiconductor device and a method of manufacturing the semiconductor device are provided. the semiconductor device includes a source structure formed on a base, an etch prevention layer formed on the source structure, bit lines, a stack structure located between the etch prevention layer and the bit lines and including conductive layers and insulating layers that are alternately stacked on each other; and a source contact structure extending into the stack structure in a vertical direction to be coupled to the source structure, wherein the source contact structure includes polysilicon.
