Sk hynix inc. (20240179926). SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179926 titled 'SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK
Simplified Explanation
The semiconductor device described in the abstract includes a resistance change layer with a metal-organic framework that has cavities and channels for receiving metal ions from the electrodes.
- The semiconductor device has a first electrode and a second electrode that are spaced apart.
- The resistance change layer between the electrodes contains a metal-organic framework with cavities.
- Channels within the cavities of the metal-organic framework receive metal ions from one of the electrodes.
Potential Applications
The technology could be applied in:
- Memory devices
- Resistive random-access memory (RRAM)
- Neuromorphic computing
Problems Solved
This technology helps in:
- Improving memory storage and retrieval
- Enhancing computing efficiency
- Enabling faster data processing
Benefits
The benefits of this technology include:
- Higher data storage capacity
- Faster data access speeds
- Lower power consumption
Potential Commercial Applications
The technology could be used in:
- Consumer electronics
- Data centers
- Internet of Things (IoT) devices
Possible Prior Art
Prior art may include:
- Previous semiconductor devices with resistance change layers
- Metal-organic frameworks used in other applications
What is the manufacturing process for this semiconductor device?
The manufacturing process for this semiconductor device involves:
- Deposition of the resistance change layer with the metal-organic framework
- Formation of the electrodes
- Integration of the device into a circuit
How does the presence of channels in the cavities affect the performance of the device?
The channels in the cavities of the metal-organic framework allow for the efficient movement of metal ions, which can enhance the conductivity and resistance switching properties of the device.
Original Abstract Submitted
a semiconductor device includes a first electrode and a second electrode that are spaced apart from each other, and a resistance change layer disposed between the first and second electrodes and including a metal-organic framework having cavities. the resistance change layer includes channels disposed in the cavities, receiving metal ions provided from one electrode of the first and second electrodes.
