Sk hynix inc. (20240178169). SEMICONDUCTOR DEVICE INCLUDING BONDING PAD simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING BONDING PAD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING BONDING PAD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING BONDING PAD
Organization Name
Inventor(s)
Byung Ho Lee of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE INCLUDING BONDING PAD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178169 titled 'SEMICONDUCTOR DEVICE INCLUDING BONDING PAD
Simplified Explanation
The semiconductor device described in the abstract consists of a lower semiconductor structure with first and second lower electrode bonding pads connected by a lower connection pattern to a first voltage, and an upper semiconductor structure with first and second upper electrode bonding pads connected by an upper connection pattern to a second voltage different from the first voltage. The bonding pads of the lower and upper structures are bonded to each other accordingly.
- Lower semiconductor structure with first and second lower electrode bonding pads
- Upper semiconductor structure with first and second upper electrode bonding pads
- Connection patterns linking the bonding pads to different voltages
- Bonding of corresponding bonding pads between lower and upper structures
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This technology helps in:
- Improving connectivity in semiconductor devices
- Enhancing performance of electronic components
- Facilitating voltage distribution in circuits
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced reliability of electronic systems
- Improved functionality of integrated circuits
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art related to this technology is the use of bonding pads in semiconductor devices to establish connections between different layers of the structure.
What materials are used in the manufacturing of the semiconductor device described in the patent application?
The materials used in the manufacturing of the semiconductor device include silicon, metal layers for electrodes, and insulating materials for the connection patterns.
How does the bonding process between the lower and upper electrode bonding pads take place in the semiconductor device?
The bonding process between the lower and upper electrode bonding pads is typically done using wire bonding or flip-chip bonding techniques, ensuring a secure and reliable connection between the two structures.
Original Abstract Submitted
a semiconductor device includes: a lower semiconductor structure including a plurality of first lower electrode bonding pads, a plurality of second lower electrode bonding pads, and a lower connection pattern connecting the plurality of first lower electrode bonding pads to each other while being connected to a first voltage; and an upper semiconductor structure disposed over the lower semiconductor structure and including a plurality of first upper electrode bonding pads, a plurality of second upper electrode bonding pads, and an upper connection pattern connecting the plurality of second upper electrode bonding pads to each other while being connected to a second voltage different from the first voltage, wherein the plurality of first lower electrode bonding pads are bonded to the plurality of first upper electrode bonding pads, respectively, and the plurality of second lower electrode bonding pads are bonded to the plurality of second upper electrode bonding pads, respectively.
