Sk hynix inc. (20240177785). MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract
Contents
- 1 MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Organization Name
Inventor(s)
Chan Hui Jeong of Gyeonggi-do (KR)
Dong Hun Kwak of Gyeonggi-do (KR)
Se Chun Park of Gyeonggi-do (KR)
MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177785 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Simplified Explanation
The present technology pertains to an electronic device with a memory device that includes memory cells, a peripheral circuit, and control logic. The peripheral circuit performs fail bit detection on selected memory cells, and the control logic sets target parameters for the main operation based on the comparison result between the fail bit detection time and a reference time.
- Memory device with memory cells, peripheral circuit, and control logic
- Peripheral circuit performs fail bit detection on selected memory cells
- Control logic sets target parameters for main operation based on comparison result
- Main operation performed on selected memory cells based on target parameters
Potential Applications
The technology can be applied in various electronic devices that require efficient memory management and error detection capabilities, such as smartphones, tablets, computers, and IoT devices.
Problems Solved
1. Efficient fail bit detection in memory cells 2. Improved control over main operations based on fail bit detection results
Benefits
1. Enhanced memory management 2. Increased reliability and performance of electronic devices
Potential Commercial Applications
"Memory Device with Fail Bit Detection and Control Logic for Improved Memory Management" can be utilized in the semiconductor industry for manufacturing memory devices with advanced error detection and control capabilities.
Possible Prior Art
One possible prior art could be the use of error correction codes (ECC) in memory devices to detect and correct errors in memory cells. However, the present technology focuses on fail bit detection and control logic for setting target parameters based on the comparison result.
Unanswered Questions
How does this technology compare to existing fail bit detection methods in terms of efficiency and accuracy?
The article does not provide a direct comparison with existing fail bit detection methods, leaving uncertainty about the technology's advantages over current practices.
What are the potential limitations or challenges in implementing this technology in real-world electronic devices?
The article does not address any potential limitations or challenges that may arise when integrating this technology into commercial electronic devices, leaving room for further exploration and analysis.
Original Abstract Submitted
the present technology relates to an electronic device. according to the present technology, a memory device may include a plurality of memory cells, a peripheral circuit, and a control logic. the peripheral circuit may perform a fail bit detection operation on memory cells selected from among the plurality of memory cells. the control logic may control the peripheral circuit to set target parameters related to a main operation based on a comparison result between a fail bit detection time measured in the fail bit detection operation and a reference time, and perform the main operation on the selected memory cells based on the target parameters.
