Sk hynix inc. (20240162324). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162324 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
Simplified Explanation
The present technology provides a semiconductor device that includes a stack with insulating patterns and conductive patterns stacked alternately, a channel layer with a first channel portion protruding out of the stack and a second channel portion in the stack, and a conductive line surrounding the first channel portion, where the first channel portion includes metal silicide.
- Explanation of the patent/innovation:
- The semiconductor device has a unique structure with alternating insulating and conductive patterns in a stack. - The channel layer has both protruding and embedded channel portions passing through the stack. - A conductive line surrounds the protruding channel portion, enhancing conductivity. - The first channel portion includes metal silicide, improving performance and efficiency.
Potential applications of this technology: - This technology can be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.
Problems solved by this technology: - This technology addresses the need for improved semiconductor device structures that enhance performance and efficiency.
Benefits of this technology: - Enhanced conductivity and performance due to the unique structure and materials used in the semiconductor device. - Improved efficiency and reliability in electronic applications.
Potential commercial applications of this technology: - The semiconductor device can be utilized by semiconductor manufacturers to produce high-performance electronic components for consumer electronics, industrial equipment, and telecommunications devices.
Possible prior art: - Prior art may include semiconductor devices with different structures and materials used for channel layers and conductive lines.
Unanswered questions: 1. How does the use of metal silicide in the first channel portion impact the overall performance of the semiconductor device? 2. Are there any specific limitations or challenges associated with implementing this unique stack structure in semiconductor manufacturing processes?
Original Abstract Submitted
the present technology provides a semiconductor device. the semiconductor device includes a stack including insulating patterns and conductive patterns stacked alternately with each other, a channel layer including a first channel portion protruding out of the stack and a second channel portion in the stack, and passing through the stack, and a conductive line surrounding the first channel portion, and the first channel portion includes metal silicide.
