Sk hynix inc. (20240162149). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ji Seong Kim of Icheon-si Gyeonggi-do (KR)
Yoon Ho Kang of Icheon-si Gyeonggi-do (KR)
Wan Sup Shin of Icheon-si Gyeonggi-do (KR)
Seok Min Jeon of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162149 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a gate structure with conductive and insulating layers stacked alternately, a contact plug extending through the gate structure, first spacer layers between the conductive layer and the contact plug, and second spacer layers between the contact plug and the first spacer layer.
- Gate structure with conductive and insulating layers stacked alternately
- Contact plug extending through the gate structure
- First spacer layers between the conductive layer and the contact plug
- Second spacer layers between the contact plug and the first spacer layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing a reliable and efficient structure for the gate and contact plug.
Benefits
- Enhanced performance of semiconductor devices - Improved efficiency in operation - Increased reliability and durability
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art could be the use of similar spacer layers in semiconductor devices to improve their performance and reliability.
=== What are the specific materials used in the conductive and insulating layers of the gate structure? The specific materials used in the conductive and insulating layers are not mentioned in the abstract.
=== How does the presence of spacer layers impact the overall performance of the semiconductor device? The impact of spacer layers on the overall performance of the semiconductor device is not discussed in detail in the abstract.
Original Abstract Submitted
a semiconductor device including: a gate structure in which conductive layers and insulating layers are alternately stacked; contact plug extending in a stacking direction of the insulating layers through the gate structure; first spacer layers each located between the conductive layer and the contact plug; and second spacer layers each located between the contact plug and the first spacer layer.
