Sk hynix inc. (20240162148). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Nam Jae Lee of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162148 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes various layers and structures such as source structure, stacked conductive layer, select conductive layers, insulating layers, and separation insulating structure.
- Source structure
- Stacked conductive layer
- First and second select conductive layers
- Stacked insulating layer
- Separation insulating structure
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- Potential Applications
This technology could be applied in:
- Memory devices
- Data storage systems
- Integrated circuits
- Problems Solved
This technology helps in:
- Improving memory device performance
- Enhancing data storage capacity
- Increasing efficiency of integrated circuits
- Benefits
The benefits of this technology include:
- Higher speed and reliability in memory devices
- Enhanced data retention capabilities
- Improved overall performance of electronic devices
- Potential Commercial Applications
This technology could find applications in:
- Consumer electronics
- Telecommunications
- Automotive industry
- Possible Prior Art
One possible prior art for this technology could be the use of similar layered structures in semiconductor devices for memory storage.
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- Unanswered Questions
- How does this technology compare to existing memory device structures?
This article does not provide a direct comparison to existing memory device structures, leaving room for further analysis and research in this area.
- What are the specific manufacturing processes involved in creating this semiconductor memory device?
The article does not delve into the specific manufacturing processes used to create this semiconductor memory device, which could be crucial information for understanding its production and scalability.
Original Abstract Submitted
provided herein may be a semiconductor memory device and a method of manufacturing the semiconductor memory device. the semiconductor memory device includes a source structure, a stacked conductive layer that overlaps with the source structure, a first select conductive layer and a second select conductive layer disposed between the source structure and the stacked conductive layer, a stacked insulating layer disposed between the first and second select conductive layers and the stacked conductive layer, and a separation insulating structure provided between the first select conductive layer and the second select conductive layer.
