Semiconductor energy laboratory co., ltd. (20240266444). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
semiconductor energy laboratory co., ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
Masayuki Sakakura of Isehara (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240266444 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract has a structure that can prevent a decrease in electrical characteristics due to miniaturization.
- The semiconductor device includes a stack with a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer covering part of the stack.
- The third oxide semiconductor layer consists of a first layer with a microcrystalline layer and a second layer with a crystalline layer where c-axes are aligned perpendicular to the surface of the first layer.
Potential Applications: - This technology can be applied in the semiconductor industry for miniaturized devices. - It can be used in electronic devices that require high electrical characteristics.
Problems Solved: - Prevents a decrease in electrical characteristics due to miniaturization. - Enhances the performance and reliability of semiconductor devices.
Benefits: - Improved electrical characteristics in miniaturized semiconductor devices. - Enhanced performance and reliability in electronic devices.
Commercial Applications: - This technology can be utilized in the production of advanced semiconductor devices for various electronic applications. - It has the potential to impact the market for miniaturized electronic devices.
Questions about the technology: 1. How does the alignment of c-axes in the crystalline layer contribute to the performance of the semiconductor device? 2. What are the specific advantages of using a microcrystalline layer in the third oxide semiconductor layer?
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Original Abstract Submitted
a semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. the semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. the third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. the first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer.
