Semiconductor energy laboratory co., ltd. (20240266359). DISPLAY DEVICE simplified abstract

DISPLAY DEVICE

Organization Name

semiconductor energy laboratory co., ltd.

Inventor(s)

Atsushi Umezaki of Atsugi (JP)

DISPLAY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240266359 titled 'DISPLAY DEVICE

Simplified Explanation: The patent application addresses the issue of threshold voltage shifts in transistors, particularly those made with amorphous silicon, when subjected to AC pulses. By applying a signal input to the gate electrode of a deteriorating transistor through a turned-on transistor, the threshold voltage shifts are suppressed.

• **Key Features and Innovation:**

   - Suppression of threshold voltage shifts in deteriorating transistors
   - Utilization of signal input through a turned-on transistor to mitigate threshold voltage shifts
   - Specifically designed structure for applying AC pulses to gate electrodes

• **Potential Applications:**

   - Integrated circuits
   - Electronic devices with transistors
   - Circuitry generating AC pulses

• **Problems Solved:**

   - Threshold voltage shifts in deteriorating transistors
   - Maintaining stable performance in circuits generating AC pulses

• **Benefits:**

   - Improved reliability of transistors
   - Enhanced performance of electronic devices
   - Increased longevity of circuitry

• **Commercial Applications:**

   - Semiconductor industry for integrated circuits
   - Consumer electronics manufacturing
   - Telecommunications equipment production

• **Questions about the Technology:**

   * **How does this innovation impact the efficiency of electronic devices?**
       - This innovation improves the stability and reliability of transistors in electronic devices, leading to enhanced efficiency.
   * **What are the potential cost savings associated with implementing this technology in circuit design?**
       - Implementing this technology can lead to cost savings by reducing the need for frequent replacements or repairs due to threshold voltage shifts in transistors.

• **Frequently Updated Research:**

   - Ongoing research on semiconductor materials and transistor design to further optimize performance and reliability. 

For more information on this technology, readers can explore research on semiconductor materials, transistor design, and circuitry optimization.

Original Abstract Submitted

by applying an ac pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. however, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an ac pulse. a shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. in other words, a structure for applying an ac pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (vdd) is applied, is included.