Semiconductor energy laboratory co., ltd. (20240258433). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
semiconductor energy laboratory co., ltd.
Inventor(s)
Shunpei Yamazaki of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258433 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation:
This patent application describes a semiconductor device that can operate at high speeds or withstand stress effectively. The device includes a semiconductor film with a channel formation region and impurity regions, a gate electrode with an insulating film, and source and drain electrodes.
- The semiconductor device can operate at high speeds.
- The device has high strength against stress.
- It includes a semiconductor film with a channel formation region and impurity regions.
- A gate electrode overlaps the channel formation region with an insulating film.
- Source and drain electrodes are in contact with the impurity regions.
Key Features and Innovation:
- High-speed operation capability
- High stress resistance
- Efficient channel formation region design
- Effective impurity region placement
- Insulating film for gate electrode protection
Potential Applications:
This technology can be used in:
- High-speed computing devices
- Stress-resistant electronic components
- Advanced semiconductor applications
Problems Solved:
- Slow operation speeds in traditional semiconductor devices
- Weakness against stress in conventional electronics
Benefits:
- Improved performance in high-speed applications
- Enhanced durability in stressful environments
- Increased efficiency in semiconductor devices
Commercial Applications:
Potential commercial applications include:
- High-performance computing systems
- Aerospace and defense electronics
- Industrial automation technologies
Prior Art:
Researchers can explore prior art related to semiconductor device design, gate electrode configurations, and impurity region optimization.
Frequently Updated Research:
Ongoing research may focus on enhancing the speed and stress resistance of semiconductor devices, improving gate electrode materials, and optimizing impurity region placement.
Questions about Semiconductor Devices:
1. What are the key factors influencing the speed of semiconductor devices? 2. How does the design of impurity regions impact the performance of semiconductor devices?
Original Abstract Submitted
a semiconductor device that can operate at high speed or having high strength against stress is provided. one embodiment of the present invention is a semiconductor device including a semiconductor film including a channel formation region and a pair of impurity regions between which the channel formation region is positioned; a gate electrode overlapping side and top portions of the channel formation region with an insulating film positioned between the gate electrode and the side and top portions; and a source electrode and a drain electrode in contact with side and top portions of the pair of impurity regions.
