Seiko epson corporation (20240288728). ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS simplified abstract
Contents
ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
Organization Name
Inventor(s)
ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240288728 titled 'ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
The abstract describes an electro-optical device with a transistor, a pixel electrode, a lens layer containing silicon oxynitride, a first relay electrode, a passivation film, and a second conductive portion.
- Transistor with drain region
- Pixel electrode corresponding to transistor
- Lens layer with silicon oxynitride
- First relay electrode electrically coupled to pixel electrode
- Passivation film in contact with lens layer
- Second conductive portion electrically coupled to first relay electrode
Potential Applications: - Display technology - Image sensors - Optical communication devices
Problems Solved: - Enhancing optical performance - Improving electrical connectivity - Protecting components from environmental factors
Benefits: - Increased image quality - Enhanced device reliability - Improved overall performance
Commercial Applications: Title: Advanced Electro-Optical Devices for High-Performance Displays This technology can be used in high-resolution displays, medical imaging equipment, and augmented reality devices, leading to improved visual experiences for users.
Questions about Electro-Optical Devices: 1. How does the lens layer contribute to the overall performance of the device? The lens layer, containing silicon oxynitride, helps improve optical clarity and protects internal components.
2. What role does the first relay electrode play in the functionality of the device? The first relay electrode is crucial for establishing electrical connections between the pixel electrode and other components, ensuring proper operation of the device.
Original Abstract Submitted
an electro-optical device includes a transistor including a drain region, a pixel electrode provided corresponding to the transistor, a lens layer arranged in a layer between the transistor and the pixel electrode and containing silicon oxynitride, a first relay electrode arranged in a layer between the lens layer and the pixel electrode and electrically coupled to the pixel electrode via a first conductive portion, a passivation film arranged in a layer between the lens layer and the first relay electrode and being in contact with the lens layer, and a second conductive portion arranged in a through hole extending through the lens layer and the passivation film and electrically coupled to the first relay electrode.
