SanDisk Technologies LLC patent applications published on July 25th, 2024
Summary of the patent applications from SanDisk Technologies LLC on July 25th, 2024
1. Summary: SanDisk Technologies LLC has recently filed patents for advanced memory array devices and high-performance field-effect transistors. The memory array device features alternating insulating and electrically conductive layers with vertical stacks and layer contact via structures for improved memory storage capacity and device performance. On the other hand, the field-effect transistor includes various regions and structures like superjunction structures to enhance efficiency and power handling capabilities. These innovations cater to the semiconductor industry's demand for high-performance memory storage devices and power electronics applications.
2. Key Points of Patents: - Memory Array Device: Alternating insulating and conductive layers, vertical stacks, layer contact via structures. - Field-Effect Transistor: Semiconductor channel, gate structure, source and drain regions, extension regions, counter-doped rails, superjunction structures.
3. Notable Applications: - Memory Array Device: Memory storage devices, semiconductor manufacturing, electronics industry. - Field-Effect Transistor: Power electronics, integrated circuits, electronic devices requiring high-performance transistors.
Contents
- 1 Patent applications for SanDisk Technologies LLC on July 25th, 2024
- 1.1 MULTI-WAFER BONDING FOR NAND SCALING (18358644)
- 1.2 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358702)
- 1.3 HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME (18356851)
- 1.4 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358727)
- 1.5 THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME (18627993)
Patent applications for SanDisk Technologies LLC on July 25th, 2024
MULTI-WAFER BONDING FOR NAND SCALING (18358644)
Main Inventor
Hiroki Yabe
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358702)
Main Inventor
Ruogu Matthew ZHU
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHOD OF MAKING THE SAME (18356851)
Main Inventor
Masashi ISHIDA
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION (18358727)
Main Inventor
Ruogu Matthew ZHU
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME (18627993)
Main Inventor
Toshiyuki ISOME
